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Analysis Example by Vacuum Model FT/IR (1)
Measurement of Silicon Wafer
(1/1)
No. 220TR0164-E
Due to the high refractive index of silicon wafer samples, there is a correspondingly high reflectance from the sample. If the
sample is placed directly in the sample compartment, vertical to the incident source beam, the reflection of the source returns to the
interferometer, is reflected by the beamsplitter and then illuminates the sample again. As a result, the sample pathlength of the
sample measurement is different from the background measurement and excessive noise is observed due to the atmospheric water
vapor, even with a purged instrument. While it is possible to adjust the angle of the sample with respect to the incident source
illumination, using an evacuated FT-IR instrument allows measurement of the sample vertical to the incident illumination without
方案详情
Application NoteNo. 220TR0164-EJASCO， USA8649 Commerce Drive Analysis Example by Vacuum Model FT/IR (1)Measurement of Silicon Wafer Due to the high refractive index of silicon wafer samples， there is a correspondingly high reflectance from the sample. If thesample is placed directly in the sample compartment， vertical to the incident source beam， the reflection of the source returns to theinterferometer， is reflected by the beamsplitter and then illuminates the sample again. As a result， the sample pathlength of thesample measurement is different from the background measurement and excessive noise is observed due to the atmospheric watervapor， even with a purged instrument.While it is possible to adjust the angle of the sample with respect to the incident sourceillumination， using an evacuated FT-IR instrument allows measurement of the sample vertical to the incident illumination without any interference due to the water vapor. Condition 50.0 Resolution： 4cm Accumulations： 16 Detector： DLATGS Fig. 1 Measurement example of epi-film on a silicon wafer
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