阴极发光设备（SEM-CL）在光电与薄膜电池材料的针孔检测方面的应用

       对于光伏(PV)和薄膜电池(TFB)来说，要在成本上与化石燃料和传统电池竞争，高制造成品率至关重要。CdTe/CdS和CdS/CIGS光伏器件的CdS层以及tbs的LiPON层的针孔导致良率损失和性能降低。扫描电镜（SEM）平面视图分析没有深度分辨率来确定孔是否完全穿透一层。Attolight CL技术的优势在于:通过对单元过程进行针孔检测，缩短了开发时间;可以比较工艺变量和沉积方法对针孔形成的影响。在针孔检测过程中评估缺陷密度和成分梯度。快速自动绘图:65秒内完成25 μm × 25 μm面积的绘图。‍CL通过检测来自底层的光来检测针孔，如下图所示:下面的SEM图像和CL图显示了该技术在SnO2化学镀液沉积的CdS上的针孔的实际应用。发射图谱如下：CdS(扫描电镜中的光区):绿色(带隙)和红色(中隙缺陷状态)。针孔(SEM中的黑色区域):蓝色(中间隙缺陷状态)来自孔底部的SnO2。圆对应于单个CL点。圆直径=电子相互作用体积(100 nm@5keV)。For photovoltaics (PV) and thin flim batteries (TFB) to cost compete against fossil fuels and traditional batteries high manufacturing yield is critical. Pinholes in the CdS layer of CdTe/CdS and CdS/CIGS PV devices and the LiPON layer of TFBs result in yield loss and lower performance. SEM plan view analysis does not have the depth resolution to determine if holes penetrate completely through a layer. Beneftis of Attolight’s CL technology are: Reduces development time by enabling pinhole detection for unit processes; allows comparison of how process variables and deposition methods efefct pinhole formation. ■ Evaluates defect density and composition gradients during pinhole detection. Rapid Automated Mapping: 25 pm × 25 pm area mapped in 65 seconds. CL detects pinholes by detecting light from the underlying layer as depicted below: The SEM image and CL map below show an actual application of this technique to pinholes in CdS deposited by Chemical Bath Deposition on SnO2. The emission lines are： · CdS (light areas in SEM)： green (band gap) and red (mid-gap defect states). ■ Pinholes (black areas in SEM)： blue (mid-gap defect states) from Sn02 at bottom of holes. Circles correspond to single CL points. Circle diameter = electron interaction volume (100nm@5keV).