废气中GeH4含量检测方案(等离子体质谱)

Sub-ppb detection limits for hydride gascontaminants using GC-ICP-QQQ Introduction： Hydride gases， such as phosphine and arsine， are important contaminants in process chemicals usedin both the petrochemical and semiconductor industries. For example， the presence ofphosphine，arsine， hydrogen sulfide and carbonyl sulfide in polymer grade ethylene or propylene can have adeleterious effect on catalysts used in the production of polypropylene plastics. Accurate data onthe concentrations of these contaminants at trace levels enables prediction of catalyst lifetime andminimizes production downtime.In the semiconductor industry， phosphine is used as a precursor forthe deposition of group III-V compound semiconductors， and as a dopant in the manufacturing ofsemiconductor devices， such as diodes and transistors. In the case of group IlI-V compoundmaterials， such as indium phosphide (InP)， absence of other hydride dopant impurities e.g.， silane，germane or hydrogen sulfide (and moisture) is critical， as they can have a profound effect on theperformance of the final device. In particular， incorporated sulfur from hydrogen sulfide andcarbonyl sulfide may affect the electrical properties of the device， such as carrier concentration andelectron mobility. In the case of arsine， which is used in the manufacture of high electron mobilitytransistors (HEMTs) and field effect transistors (FETs)， product performance can be adverselyaffected by the presence of germane. Agilent Technologies