美国OAI边缘曝光机2000SM,2000AF

美国OAI边缘曝光机 2000SM,2000AF


详细介绍

型号2000SM边缘曝光系统

2000AF型曝光系统

OAI 2000型曝光系统可以配置为边缘曝光系统（2000SM）或曝光系统（2000AF）;这两种配置都基于OAI经过验证的，经过时间测试的平台。

两种型号的2000型曝光系统包括UV光源，强度控制电源和机器人衬底处理子系统。 UV光源提供发散半角<2.0％的可调强度光束。电源从200W到2,000W。强度控制器传感器直接连接到光源，用于精确的强度监控。机器人衬底处理系统是微处理器控制的，并且可以被编程以适应各种各样的衬底尺寸。阴影掩模能力使得用户能够在保持非常接近掩模的同时对衬底的顶部进行图案化。在25微米的分离时，这些系统能够具有6微米的分辨率。

在SM配置中，边缘珠曝光系统提供了一种经济有效的方法，使用标准阴影掩模技术进行边缘珠去除。掩模和基材切换可以快速且容易地实现，从而增加了该大批量生产工具的通用性和生产量。

在AF配置中，2000型泛光曝光系统用于增强和/或增强生产和研发环境中的光刻过程。应用包括光刻胶稳定和改性，图像反转和PCM工艺。


Model 2000SM Edge-bead Exposure System

Model 2000AF Flood Exposure System

The OAI Model 2000 Exposure Systems may be configured as either an edge-bead exposure system (2000SM) or a flood exposure system (2000AF); both configurations are based on OAI's proven, time-tested platform.

Both versions of the Model 2000 Exposure System include a UV light source, intensity controlling power supply and robotic substrate handling subsystem. UV light sources provide adjustable intensity beams with divergence half-angles of <2.0%. Power supplies are available from 200W to 2,000W. Intensity controller sensors are linked directly to the light source for accurate intensity monitoring. The robotic substrate handling system is microprocessor controlled and may be programmed to accommodate a wide variety of substrate sizes. The shadow mask capability enables the user to pattern the top of a substrate while being held in very close proximity to the mask. At a separation of 25-microns, these systems are capable of 6-micron resolution.

In the SM configuration, the Edge-bead Exposure System provides a cost-effective method for edge-bead removal using standard shadow mask technology. Mask and substrate changeover can be accomplished quickly and easily adding to both versatility and throughput of this high-volume production tool.

In the AF configuration, the Model 2000 Flood Exposure System is used to augment, and/or enhance the photolithography processes in both production and R&D environments. Applications include photo resist stabilization and modification, image reversal and PCM processes.