CCP介质刻蚀机

NMC 508系列 CCP介质刻蚀机

1、独特的多频解耦设计，实现优异的均匀性及高深宽比介质刻蚀 

Unique multi-frequency coupling design, excellent uniformity and high aspect ratio media etching 

2、应用领域广泛，涵盖Si power、SiC Power、GaN Power、MEMS、硅光等 

Multiple applications, including Si Power, SiC Power, GaN Power, MEMS, Silicon Photonics, etc. 

3、工艺种类覆盖前道HM刻蚀、CT刻蚀、Spacer刻蚀，后道Via刻蚀、PAD刻蚀 

Variety process, including HM Etch、 CT Etch、 Spacer Etch、Via Etch、PAD Etch 

4、灵活的系统配置，适合研发、中试线、大规模生产线的不同应用 

Flexible system configuration suitable for different applications such as R&D, pilot line and mass production 

5、采用Clean Mode量产，前道、后道均可实现优异的量产稳定性及更高的MTBC 

Use clean mode for mass production, excellent production stability and longer MTBC can be achieved for both FEOL and BEOL process

技术参数 Technical Parameters

1、晶圆尺寸 6/8 英寸兼容

2、适用材料 氧化硅、氮化硅、氮氧化硅

3、适用工艺 钝化层刻蚀、硬掩膜刻蚀、接触孔刻蚀、导线孔刻蚀、侧衬刻蚀、回刻、自对准刻蚀

4、适用领域 科研、集成电路、化合物半导体