Introduction Application Note As semiconductor devices continue to decrease in size to improve performance and take advantage of advances in fabrication techniques, there is a need to analyse both their structure and chemistry at ever increasing resolution. Typically this requires the use of TEM for metrology and failure analysis. Using ultrahigh resolution FEG-SEM, low kV imaging and the new X-Max® Extreme EDS detector we demonstrate the ability to retain some of this high resolution analysis in the SEM. This allows for better targeting of resources and increased throughput of analysis.

Introduction In Transmission Electron Microscopy (TEM) there are two ‘go to’ techniques for elemental analysis: Energy Dispersive X-ray Spectroscopy, (EDS), and Electron Energy Loss Spectroscopy, (EELS). EDS is a mature technique that can be used for most specimens. The intensity of generated X-rays is proportional to the mass thickness of the sample. However, this can become a limitation for very thin specimens or those comprising light elements. On the other hand, EELS is more suitable for thin samples where the thickness is less than the inelastic mean free path of electrons in the material. EELS does, however, give high signal to noise for light elements. Simultaneous acquisition of both signals is a powerful tool for materials analysis.

提供等离子体原子层刻蚀实现无损伤刻蚀。原子层蚀刻（ALE）是一种技术允许每次精确除去一个原子层，是使用常规刻蚀无法达到的控制水平。 牛津仪器的设备和工艺已通过充分验证，正常运转时间可达90%以上，一旦设备安装完毕，可立即投入使用。PlasmaPro 100系列市场应用广，包括但不限于： MEMS和传感器、光电子、分立元器件和纳米技术。它具有足够的灵活性，可用于研究和开发，通过打造质量满足生产需求。

高性能电动汽车等高新技术领域对高效动力转换的需求与日俱增，在这些领域高效动力转换必不可少。SiC 和 GaN 材料的使用降低了能耗。牛津仪器通过原子层沉积（ALD）技术、等离子体辅助蚀刻和沉积技术优化了工艺，提高了器件的能效。

Introduction Application Note As semiconductor devices continue to decrease in size to improve performance and take advantage of advances in fabrication techniques, there is a need to analyse both their structure and chemistry at ever increasing resolution. Typically this requires the use of TEM for metrology and failure analysis. Using ultrahigh resolution FEG-SEM, low kV imaging and the new X-Max® Extreme EDS detector we demonstrate the ability to retain some of this high resolution analysis in the SEM. This allows for better targeting of resources and increased throughput of analysis.

Development and testing of semiconductor devices requires extensive knowledge of local structure and elemental composition. With feature sizes of <5 nm, it is often necessary to perform imaging and EDS analysis in a S / TEM. Once in the TEM, there are still many difficulties to be overcome to acquire accurate elemental maps. Elemental analysis of semiconductors is typically difficult due to strong overlaps of X-ray lines between commonly used elements and low concentrations of dopants. Not only are concentrations of dopants small but their X-ray lines often overlap with other materials used in semiconductor processing. This brief shows how AZtecTEM solves these overlaps to achieve an accurate elemental analysis. TEM Semiconductor Mapping in the TEM Solving peak overlaps in real-time Application Brief