电镜专用微区成分分析---牛津仪器Ultim Max能谱仪

Development and testing of semiconductor devices requires extensive knowledge of local structure and elemental composition. With feature sizes of <5 nm, it is often necessary to perform imaging and EDS analysis in a S / TEM. Once in the TEM, there are still many difficulties to be overcome to acquire accurate elemental maps. Elemental analysis of semiconductors is typically difficult due to strong overlaps of X-ray lines between commonly used elements and low concentrations of dopants. Not only are concentrations of dopants small but their X-ray lines often overlap with other materials used in semiconductor processing. This brief shows how AZtecTEM solves these overlaps to achieve an accurate elemental analysis. TEM Semiconductor Mapping in the TEM Solving peak overlaps in real-time Application Brief

Introduction Historically energy dispersive X-ray spectroscopy has been focused towards high energies where X-ray lines are well separated and the X-ray background is low. Recently the demand for higher spatial resolution, whether that is when analysing semiconductor devices or measuring precipitates in metals, has increased dramatically. To ensure maximum sensitivity when working under these demanding conditions the Ultim® range of EDS detectors combine the largest area SDD with optimised geometries to consistently deliver a higher count rate.