核心参数
仪器种类: 台式/桌面型
电子枪种类: 钨灯丝
产地类别: 进口
二次电子图象分辨率: 1.0nm(15kV.WD=4mm)
放大倍数: 低:20-2,000x 高:100-500000x
加速电压: 1-30KV
背散射电子图像分辨率: 4nm@30kV(低真空模式)
牛津仪器扫描电镜AZtecFeature的工作原理介绍
扫描电镜AZtecFeature的使用方法?
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NA-EDS-Extreme-半导体
Introduction Application Note As semiconductor devices continue to decrease in size to improve performance and take advantage of advances in fabrication techniques, there is a need to analyse both their structure and chemistry at ever increasing resolution. Typically this requires the use of TEM for metrology and failure analysis. Using ultrahigh resolution FEG-SEM, low kV imaging and the new X-Max® Extreme EDS detector we demonstrate the ability to retain some of this high resolution analysis in the SEM. This allows for better targeting of resources and increased throughput of analysis.
半导体
2018/01/08
NA-EDS for TEM-半导体
Development and testing of semiconductor devices requires extensive knowledge of local structure and elemental composition. With feature sizes of <5 nm, it is often necessary to perform imaging and EDS analysis in a S / TEM. Once in the TEM, there are still many difficulties to be overcome to acquire accurate elemental maps. Elemental analysis of semiconductors is typically difficult due to strong overlaps of X-ray lines between commonly used elements and low concentrations of dopants. Not only are concentrations of dopants small but their X-ray lines often overlap with other materials used in semiconductor processing. This brief shows how AZtecTEM solves these overlaps to achieve an accurate elemental analysis. TEM Semiconductor Mapping in the TEM Solving peak overlaps in real-time Application Brief
半导体
2018/01/08
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