德国SUSS紫外光刻机MA6/BA6

SUSS MicroTec 掩模对准器以其成熟的曝光光学系统成为高品质和高对准精度的代名词。产品线从科研和开发设备，到全自动大规模生产系统。SüSS MicroTec 的掩模对准器系统主要用于 MEMS、先进封装、三维封装、化合物半导体、功率器件、太阳能、纳米技术和晶圆片级光学系统等领域的光刻应用。

SUSS MicroTec 的掩模对准和键合对准平台不仅能将掩模对准晶圆，还能让两个晶圆可靠地相互对准。设备可处理 300 mm 以下各种材料、任意厚度的衬底和晶圆。借助大量附加功能，掩模对准器不仅能满足多样化的工艺要求，还具有灵活的配置选项。

张先生 

MA6/BA6 紫外曝光机/光刻机

Perfect Low-Cost Solution: 

•   High Accuracy 

•   Good Optical performance

•   latest processes (e.g. UV-NIL) 

Addressed Markets: 

•   MEMS 

•   Telecommunications

•   Compound Semiconductors

•   Nano Imprint Lithography 

Technical Data 

•   Wafer size:  up to 150 mm / 6′′ (round)

•   Min. pieces: 5 x 5mm

•   Mask size: SEMI spec, standard up to 7^′′ x 7^′′ (SEMI) 

Exposure Modes 

•   Contact: soft, hard, low vacuum, vacuum 

•   Proximity : exposure gap 1-300 μm

Optics 

•   UV250, UV300, UV400 and broadband optics

•   Intensity Uniformity ± 5% on 100mm

•   Constant power or constant intensity

•   Lamp sizes: 200W, 350W, 500W (for UV250)

•   Resolution down to 0,4 μm L/S (vacuum contact, UV250) 

Alignment

•   Top Side Alignment (TSA); Bottom Side Alignment (BSA); Infrared Alignment (IR) Vacuum 

•   TSA alignment accuracy: 0.5μm (with SUSS recommended wafer targets) 

•   BSA:down to 1μm

•   Alignment gap:1–1000μm