美国Rtec化学机械抛光设备
美国Rtec化学机械抛光设备
美国Rtec化学机械抛光设备
美国Rtec化学机械抛光设备

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Rtec

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R-CP

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美洲

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产地类别: 进口

Main Features:
Technique
Chemical Mechanical Polishing (CMP) is a process that is used for the planarization of wafers, materials etc. Polishing takes advantages of the synergetic effect of both physical and chemical forces for polishing of wafers. This is done by applying a load force to the back of a sample while it rests on a pad. Both the pad and sample are then counter rotated while a slurry containing both abrasives and reactive chemicals is passed underneath.
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Conditioning
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Both insitu and ex situ conditioning
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Wafer size
Easy to interchange various wafer holders that allows to polish samples from 1inch to 6 inch on same tester
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Pump
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Independent Programmable pumps to supply slurry, water and other chemistries
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Consumables and consultation
We not only supply the instrument but also supply consumables (slurry, pads etc.) for standard polishing materials and provide consultation through our highly qualified team of scientists on process development and optimization.
Specifications:
  • Manual wafer loading
  • Easy to interchange carrier head (6, 5, 4 inches etc.)
  • Close loop down force control
  • Max down force 150Kgf (or 0.049Mpa for 8inch wafer)
  • Minimum foot print in this class
  • Easy operation by TFT color touch panel
  • Optional carrier for MEMS, low k material can applied extremely low down force control
  • Sweeping in-situ and ex-situ conditioning
  • Recipes storage

    Applications:                                                                                                                                                            Polishing, Slurry development, Particle development, Process development, Pad characterization, Condition development

  • Condition development










                                                                                          化学机械抛光设备
R-CP是世界最通用和最先进的台式化学机械抛光设备(CMP),可以很好的满足您的研发需求。完全软件控制,可以对直径1-6英寸的晶圆和磁盘进行抛光。 R-CP可检测原位摩擦力,摩擦系数,温度,下压力,磨损,声发射等,可以模拟所有的参数,如速度,负载和流量,来模仿一个大的CMP系统。

用于化学机械抛光的研究和开发的各个方面
测试和开发各种不同的微粒,材料,浓度,氧化剂,抑制剂等的抛光液
测试和开发不同的材料,沟槽形状,尺寸,弹性,寿命等
测试和发展抛光垫调节装置来优化抛光垫的损耗率,修整,效率等
开发CMP定位环材料来优化摩擦,磨损,寿命等
测试去除率,重复性缺陷,工艺优化等,研究或开发各种应用的各种材料
半导体方面 - 铜,Ta, TaN, Al, Si, SiO, Ru, WC, solar cells, PVD, CVD, 薄膜等
化合物半导体 - 砷化镓,铟,磷化物,汞,镉
应用生物材料 - 牙,骨,钛,钢铁制品等。
光电材料 – LED,蓝宝石,红外窗口抛光激光材料,显微镜头,微光学,铌酸锂,钽酸锂,磷酸氧钛钾等。
同时实时监测及处理
通过在晶圆垫和调节垫界面处的拥有专利的传感器,测量负载和摩擦力,
通过在晶圆垫和调节垫界面处的拥有专利的传感器和放大器,测量接触噪声
使用声波表征的缺陷、划痕,并在加工过程中分层
监测流入的抛光液,抛光片表面和流出废液的温度


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美国Rtec化学机械抛光设备信息由德可纳利(上海)仪器有限公司-KD Scientific中国代理为您提供,如您想了解更多关于美国Rtec化学机械抛光设备报价、型号、参数等信息,欢迎来电或留言咨询。
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