正性光刻胶PR1-12000A
正性光刻胶PR1-12000A

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PR1-12000A

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美洲

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PR1-12000A
Positive Resist PR1-12000A is a positive tone photoresist designed for 365 or 436 nm wavelength
exposure, using tools such as wafer steppers, scanning projection aligners, proximity printers and
contact printers. PR1-12000A excels in applications when superior adhesion is required. Use of
adhesion promoters, such as HMDS is not recommended with PR1-12000A.
These are the advantages of PR1-12000A over other resists:
- superior resolution capability
- fast photospeed
- substrate adhesion which is superior to that of any commercial positive resist
- ease of removal after RIE process
- shelf life exceeding 1 year at room temperature storage.
The formulation and processing of PR1-12000A were designed with regard to occupational and
environmental safety. The principal solvent in PR1-12000A is 1-methoxy-2-propanol and
development of PR1-12000A is accomplished in a basic water solution.
Properties
♦ Solids content (%): 40-45
♦ Principal solvent: 1-methoxy-2-propanol
♦ Appearance: light yellow liquid
♦ Coating characteristic: very uniform, striation free
♦ Film thickness information:
Coating spin speed,
40 s spin (rpm)
Film thickness after 100°C oven
bake for 15 min (nm)
800 23500-24500
2300 14800-15200
3000 11800-12200
♦ Sensitivity (mJ/cm² for 1 μm thick film):
365 nm exposure wavelength: 70
436 nm exposure wavelength: 40
♦ Guaranteed shelf life at 25°C storage (years): 1
Processing
1 Application of resist by spin coating at selected spin speed for 40 s.
2 Application of Edge Bead Remover EBR1 to bottom and edge of the coated wafer for 10 s,
until 5 s before completion of spin cycle.
3 100°C bake in a bake oven for 30 minutes or 120ºC hotplate bake for 180 s.
4 Resist exposure with a tool emitting 365, 406 or 436 nm wavelengths.
5 Resist development in Resist Developer RD6 by spray or immersion.

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