负性光刻胶NR71-6000PY

NR71-6000PY
Negative Resist NR71-6000PY is a negative tone photoresist designed for 365 nm wavelength
exposure, using tools such as wafer steppers, scanning projection aligners, proximity printers and
contact printers.
After resist development NR71-6000PY exhibits a negative-sloping resist sidewall profile, which
facilitates a simple resist lift-off process.
These are advantages of NR71-6000PY over other resists:
-superior resolution capability
-fast develop time
-easy adjustment of the degree of resist undercut as a function of exposure energy
-superior temperature resistance of up to 180°C
-superior film thickness uniformity
-elimination of adhesion promoters such as HMDS
-shelf life exceeding 3 years at room temperature storage.
The formulation and processing of NR71-6000PY were designed with regard to occupational and
environmental safety. The principal solvent in NR71-6000PY is gamma butyrolactone and
development of NR71-6000PY is accomplished in a basic water solution.
Properties
♦ Solids content (%): 40-43
♦ Principal solvent: gamma butyrolactone
♦ Appearance: light yellow, liquid
♦ Coating characteristic: very uniform, striation free
♦ Film thickness information
Coating spin speed, 40 s spin (rpm) Film thickness after 150°C hotplate bake for 60 s (nm)
1000 11020-12180
1200 10136-11203
1500 8137-8993
2000 7011-7749
3000 5700-6300
4000 4978-5502
♦ Sensitivity at 365 nm exposure wavelength (mJ/cm² for 1 μm thick film): 190
♦ Guaranteed shelf life at 25°C storage (years): 3
Processing
1 Application of resist by spin coating at selected spin speed for 40 s.
2 Begin dispensing Edge Bead Remover EBR2 simultaneously onto the top and bottom
surfaces of the spinning, coated substrate through nozzles that are 0.5-1.0 cm from the edge of
the substrate when edge bead begins to form (3-5 s after ceasing resist dispense). Stop
dispensing EBR2 5 seconds prior to completion of spin coating cycle.
3 150°C hotplate bake for 60 s*; 165°C hotplate bake for 240 s** (softbake)
4 Resist exposure in a tool emitting 365 nm wavelength.
5 100°C hotplate bake for 60 s*; 110°C hotplate bake for 240 s** (post-exposure bake)
6 Resist development in Resist Developer RD6 by spray or immersion. Development time for 6
μm thick film, for example, is 50 s.
7 Resist rinse in deionized water until water resistivity reaches prescribed limit.
8 Drying of resist.
9 Removal of resist in Resist Remover RR41.
*For good conductors of heat such as Si, GaAs, InP, etc.
**For 1mm thick glass substrate.
Handling Precautions
Negative Resist NR71-6000PY is a combustible liquid. Handle it with care. Keep it away from heat,
sparks and flames. Use adequate ventilation. It may be harmful if swallowed or touched. Avoid
contact with liquid, vapor or spray mist. Wear chemical goggles, rubber gloves and protective
coating.