RIE反应离子刻蚀机

Reactive Etching System Specifications: NRE NDR Control: PC, Lab View PC, Lab View Chamber: 13” Aluminum, solid block 13” Aluminum, solid block/SS Cubic Chamber Substrate Holder: 13 °C, water cooled -60 °C, Cryogenic/electrostatic chuck Gas Distribution: Shower Head, MFC’s, SS lines Gas Ring, MFC’s, SS lines Plasma Source RF Platen, P-100 (Hollow Cathode) Planar ICP 200 (8”) DC Bias: up to -500V Self Bias up to -1000 V external bias Base Pressure: 5x10-7 Torr 5x10-7 Torr Process Pressure: 0.02-8 Torr 0.001 Torr and up RF Power: 600 W, 1000W Optional 600W, or 1KW Vacuum Pump: 200 L/sec Corrosive Turbo 260 L/sec Corrosive Turbo/500 L/sec optional Mechanical pump: RV 12 with Fomblin Oil RV 12 with Fomblin Oil/Dry Scroll Pump Power: 110/220V 3Phase, 40/20A 110/220V 3Phase, 40/20