霍尔效应传感器（磁场测量传感器）

Maximum operating temperature range

T

1.8 to 353

K

Performance guaranteed within this range. Operation <1.8 K is possible

Measurable field range

B

>+/- 9

T

See Fig.2. At 1.8K, 0-9 T is possible with reduced linearity

Open Circuit Sensitivity

S

1100

V/AT

@ room temperature. see Fig 3 for change with temperature

Open Circuit Hall Voltage

VH

110

mV

I=IN and B=1 T, increases with reducing temperature

Spectral Noise Density

SDT

7

μ???√????

10 Hz, 2 VRMS (equivalent to I=IN)

0.7

1 kHz, 2 VRMS (equivalent to I=IN)

0.3

10 kHz, 2 VRMS (equivalent to I=IN)

0.07

100 kHz, 2 VRMS (equivalent to I=IN)

Resolution, based on SDT on a 1 T field

RSND

7

ppm

10 Hz, 2 VRMS (equivalent to I=IN)

0.7

1 kHz, 2 VRMS (equivalent to I=IN)

0.3

10 kHz, 2 VRMS (equivalent to I=IN)

0.07

100 kHz, 2 VRMS (equivalent to I=IN)

RMS noise

??T2?

40

?T

0.1 – 10 Hz, 2 VRMS (equivalent to I=IN)

28

10 – 100 kHz, 2 VRMS (equivalent to I=IN)

Linearity of Hall Voltage

% of full scale

FL

<0.5

%

-1 to 1 T. See Fig 2 for full 0-9 T range

Corrected Linearity

<0.01

%

-1 to 1 T, after 3rd order correction

Planar Hall Effect

HPL

<10

μT

At I=IN , 1 T

Nominal Supply Current

IN

0.1

mA

Can be operated down to I=10 nA

Maximum Supply Current

Imax

1

mA

Supply Side Internal Resistance

RIN

22

k?

B=0 T

Hall Side Internal Resistance

ROUT

22

k?

B=0 T

Offset Voltage

VR0

8

mV

Typical offset voltage at I=IN and B=0 T

0.6

mV

Min offset voltage at I=IN and B=0 T

34

mV

Max offset voltage at I=IN and B=0 T

Temperature Coefficient of Sensitivity

TCS

-4.7

V/AT/K

@ room temperature, IN

VIN+

1 or 11

Input voltage can be supplied with either

polarity

VIN-

11 or 1

VH+

6 or 16

Hall voltage polarity will

depend on VIN polarity and field polarity

VH-

16 or 6