In2S3 crystals 三硫化二铟晶体

Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band gap ranging from 2 eV - 3.25 eV. It's fundamental band gap nature (direct vs indirect) and its value have been much debaded in the field and remains open ended. In2S3 is particular attractive semiconductor for photoelectrochemical, solar cell, and photonic applications. Typical crystal sizes range in few-mm in size and each order contains 5-7 pieces of In2S3 crystals. The crystals appear layered but is harder to exfoliate compared to molybdenum disulfide. Thus, we recommend using highly adhesive tapes, ultrasonic exfoliation, or other methods to yield atomically thin sheets.

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除供应In2S3 crystals 三硫化二铟晶体外，上海巨纳科技有限公司还可为您提供碲化锡 Sb2Te3 (Antimony Telluride)、Bi2Se3 硒化铋晶体-未掺杂 (Undoped Bismuth Selenide)、HfSe2 二硒化铪晶体 (Hafnium Diselenide)等产品，公司有专业的客户服务团队，是您值得信赖的合作伙伴。