InSe 硒化铟晶体 (Indium Selenide)

InSe (indium selenide) is the first commercially available InSe layered materials in the field. Our single crystal InSe crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using three different state-of-art techniques: i) Bridgman growth, ii) flux zone growth, and iii) chemical vapor transport (CVT) growth. The latter (CVT) produces contaminated samples. Flux zone technique is suitable for good crystallization but crystal sizes are limited to ~5mm. In contrast, Brigmann method offers good crystallinity as well as large size (larger than 1cm). Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. 
Properties of InSe crystals by 2Dsemiconductors USA

InSe 硒化铟晶体 (Indium Selenide)信息由上海巨纳科技有限公司为您提供，如您想了解更多关于InSe 硒化铟晶体 (Indium Selenide)报价、型号、参数等信息，欢迎来电或留言咨询。

除供应InSe 硒化铟晶体 (Indium Selenide)外，上海巨纳科技有限公司还可为您提供2H-二硫化钽（2H-TaS2）、Monolayer WS2 Powder 单层二硫化钨粉末、二碲化铌晶体（99.995%） NbTe2(Niobium Selenide)等产品，公司有专业的客户服务团队，是您值得信赖的合作伙伴。