TiS2 二硫化钛晶体 (Titanium Disulfide)

Our TiS2 crystals are stabilized in 1T ohase (semimetallic phase). They are grown using two different techniques through chemical vapor transport (CVT) or flux zone growth (see description of these two methods below). These crystals are treated as gold standards in 2D materials field owing to perfected electronic behavior with guaranteed phase transition and semimetallic responses. Our TiS2 crystals are notoriously known low impurity resistance (zero temperature resistance), high carrier mobility, extremely clean and sharp XRD peaks, and negligible amount of defects (see published results as well as CVT vs. Flux based methods below ). Our TiS2 crystals are large in size and ready for exfoliation without any preparation.

Properties of vdW TiS2 crystals

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.

TiS2 二硫化钛晶体 (Titanium Disulfide)信息由上海巨纳科技有限公司为您提供，如您想了解更多关于TiS2 二硫化钛晶体 (Titanium Disulfide)报价、型号、参数等信息，欢迎来电或留言咨询。

除供应TiS2 二硫化钛晶体 (Titanium Disulfide)外，上海巨纳科技有限公司还可为您提供金云母 （10片装）MICA phlogopite 、二硫铼钼、氟化石墨（氟化石墨）等产品，公司有专业的客户服务团队，是您值得信赖的合作伙伴。