仪器简介:少子寿命测试仪性能参数: 测量原理 QSSPC(准稳态光电导)少子寿命测量范围 100 ns-10 ms测试模式:QSSPC,瞬态,寿命归一化分析电阻率测量范围 3&ndash 600 (undoped) Ohms/sq.注入范围:1013-1016cm-3感测器范围 直径40-mm测量样品规格 标准直径: 40&ndash 210 mm (或更小尺寸)硅片厚度范围 10&ndash 2000 &mu m外界环境温度 20° C&ndash 25° C功率要求 测试仪: 40 W 电脑控制器:200W 光源:60W通用电源电压 100&ndash 240 VAC 50/60 Hz主要特点: 适应低电阻率样片的测试需要,最小样品电阻率可达0.1ohmcm 全自动操作及数据处理 对太阳能级硅片,测试前一般不需钝化处理 能够测试单晶或多晶硅棒、片或硅锭 可以选择测试样品上任意位置 能提供专利的表面化学钝化处理方法 对各道工序的样品均可进行质量监控: 硅棒、切片的出厂、进厂检查 扩散后的硅片 表面镀膜后的硅片以及成品电池少子寿命测试仪Best available calibrated measurement of carrier recombination lifetime. Widely used for both monocrystalline and multicrystalline wafers.Product OverviewWCT testers showcase our unique measurement and analysis techniques, including the highly regarded Quasi-Steady-State Photoconductance (QSSPC) lifetime measurement method developed by Sinton Instruments in 1994.The QSSPC technique is ideal for monitoring multicrystalline wafers, dopant diffusions, and low-lifetime samples. This method complements the use of the transient photoconductance technique that is also standard on this instrument.The QSSPC lifetime measurement also yields the implied open-circuit voltage (versus illumination) curve, which is comparable to an I-V curve at each stage of a solar cell process.WCT System CapabilitiesPrimary application:Step-by-step monitoring and optimization of a fabrication process.Other applications: Sinton Instruments' analysis yields a calibrated carrier injection level for each wafer, so you can interpret lifetime data in a physically precise way. Specific parameters of interest are displayed and logged for each measurement.&bull Monitoring initial material quality&bull Detecting heavy metals contamination during wafer processing&bull Evaluating surface passivation and emitter dopant diffusion&bull Evaluating process-induced shunting using the implied I-V measurementFurther Information技术参数:FAQ:&bull What is the recombination lifetime?&bull How does the solar cell efficiency depend on the lifetime?&bull What determines the lifetime in silicon?&bull How is lifetime measured by the Sinton Instruments tools?&bull How is the data analyzed?&bull Can you measure surface recombination velocity?&bull Does the system measure emitter saturation current density?&bull Can wafers be measured with no surface passivation (&ldquo out of the box&rdquo )?&bull Can any of these instruments do lifetime maps?&bull How do these measurements compare to microwave PCD?&bull What lifetimes can be measured?&bull What is the smallest sample size?&bull How do you measure bulk lifetime on blocks or ingots?&bull At what carrier density should I report the result?&bull Can the lifetime tester be used to detect Fe contamination?&bull How is the instrument calibrated?&bull When should wafers be tested inline?&bull Does the lifetime tester measure the trapping? Module and Cell Flash Testers frequently asked questions主要特点:常见问题:WT-2000与WCT-120测少子寿命的差异?WCT用的是Quasi-Steady-State Photoconductance(QSSPC准稳态光电导)而WT2000是微波光电导。WCT-120/100准稳态光电导法测少子寿命的原理?WCT用的是Quasi-Steady-State Photoconductance(QSSPC准稳态光电导)
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