肉嫩度测仪

肉制品中糖检测之前处理方法本篇中的肉制品，如素肉堡、腌渍鲜嫩鸡胸肉、原味炸鸡、辣味炸鸡、基础风味鸡肉丝、香料鸡排、鸡翅蓉、鸡肉热狗、香草鸡腿排等，在加工过程中添加复杂的佐料进行调味，这给肉制品中糖的定量分析造成很大困难。肉制品中糖的定量分析有两个难点：一、没有现成的定量分析标准方法可以参考。二、净化不彻底的样品溶液上机LC/ELSD后，极易毁坏糖专用色谱柱和堵塞ELSD雾化器，消耗很大的维修成本；为了解决这个问题，巨研科技研发出FaAEx-AD2糖专用SPE净化柱，摸索出合适的前处理操作步骤和仪器分析条件。 此分析方法通过方法验证后，邀请业内同行进行实践验证，同行反馈FaAEx-AD2糖专用SPE柱的净化效果良好！本篇将介绍两个肉制品中糖检测的方法：方法一：使用巨研FaAEx-AD2 糖专用SPE柱净化，以LC/ELSD法分析；方法二：参考GB/T 9695.31-2008方法，使用分光光度法和直接滴定法分析。方法一：使用巨研FaAEx-AD2 糖专用SPE柱净化以泰式調味腿肉片样品为例，测试果糖（Fructose）、山梨醇（Sorbitol）、半乳糖（Galactose）、葡萄糖（Glucose）、蔗糖（Sucrose）、乳糖（Lactose）和麦芽糖（Maltose），样品加入10ml的50%乙醇溶液、超声、震荡、定容、离心后取上清液。将上清液通过FaAEx-AD2糖专用柱除杂（只需一步过柱），获得目标物溶液，过滤后上机到LC/ELSD进行定量分析。 （1）前处理步骤：样品均质 ↓ 取1g样品于离心管中，加10 ml 50%乙醇溶液 ↓ 超声震荡20min↓ 高速震荡10min↓ 以50%乙醇溶液定容至20 mL(固体样品:直接加10mL) ↓ 6000rpm离心30min ↓ 取10ml上清液过巨研FaAEx-AD2 糖专用SPE柱，取滤液上机分析（无须活化平衡，一步通过法获得目标物）（2）LC-MSMS分析出谱图如下：（3）小结：使用FaAEx-AD2 糖专用SPE柱净化后，再上机分析，有两个好处：1、 果糖（Fructose）、山梨醇（Sorbitol）、半乳糖（Galactose）、葡萄糖（Glucose）、蔗糖（Sucrose）、乳糖（Lactose）和麦芽糖（Maltose）这7种糖的回收率在80-120%之间。2、 有效延长糖专用色谱柱的使用寿命，避免堵塞ELSD雾化器，大大降低耗材和配件的损耗成本。3、 前处理中已经进行萃取、超声和离心的净化操作，为什么还要开发FaAEx-AD2 糖专用柱再次除杂？答：因为离心得到的上清液过滤膜后上机分析，进几针样品后，糖专用色谱柱被污染、ELSD雾化器也很快被堵塞，基本不能进行日常的品控管理。离心得到的上清液经过FaAEx-AD2 糖专用柱净化后，有效地解决了这个问题，需要在日常做肉制品中糖测试的用户，持续回购FaAEx-AD2 糖专用柱。方法二：参考GB/T 9695.31-2008标准方法关于肉制品中总糖的检测，我们有一个标准方法，即：《GB/T 9695.31-2008肉制品 总糖含量测定》，以葡萄糖为对照物。第一法适用于肉制品中总糖含量的测定，使用分光光度法；试样中的总糖含量以葡萄糖计。 第二法适用于不含淀粉的肉制品中总糖含量的测定，使用直接滴定法测糖总结：1、 肉制品中糖的检测，若采用GB/T 9695.31-2008标准方法，前处理步骤操作复杂，耗时长，花费大量人力，分析结果的灵敏度比LC/ELSD法低，几乎不能做定量分析。2、 采用LC/ELSD法分析肉制品中的糖含量，难点在于怎么充分去除复杂样品中的杂质。通过在样品中加入10ml的50%乙醇溶液、超声、震荡、定容、离心、过滤这些步骤，回收率尚可，但除杂效果不佳，进样几次后，糖专用色谱柱被污染，甚至ELSD雾化器被堵塞，增加耗材和仪器配件的消耗成本。3、 将离心后的上清液，一步法通过FaAEx-AD2糖专用SPE柱的净化、过滤后上机分析，可有效去除杂质，延长糖专用色谱柱和ELSD的使用寿命，且HPLC基线更加平稳，回收率表现更优（80-120%）。

Agilent 4100/4200 系列 MP-AES 仪器可与一系列能够扩展仪器性能的安捷伦附件和备件兼容，其中包括 Agilent OneNeb 第二代雾化器。OneNeb 第二代雾化器可为 MP-AES 仪器提供卓越的性能。基于分散流雾化技术的 OneNeb 第二代雾化器可提高灵敏度和容差，对溶解态固体具有更高的耐受性。此外，惰性构造使 OneNeb 成为一款通用雾化器，能够处理大多数 MP-AES 样品基质。 直接替代标准玻璃同心雾化器及其他具有 6 mm 外径喷嘴的惰性雾化器 适用于安捷伦 ICP-OES 和 MP-AES 系统 适用于传统玻璃旋流雾化室和惰性雾化室 — 可兼容具有 6 mm 外径喷嘴的雾化器。 提高灵敏度 — 由于分散流雾化技术能够生成极小颗粒气溶胶 高效 — 在常规和微量样品提升速率下均如此 对总溶解态固体 (TDS) 含量高的样品具有更强的耐受性 惰性构造 — 确保 OneNeb 能够处理大多数 MP-AES 样品基质

Components for DUV-photolithography资料下载：Download Components for DUV-photolithography Datasheet (PDF, 388 KB)One of the essential requirements of modern optoelectronics consists in miniaturization of equipment and devices as well as the components they include. It dictates the necessity of utilization of DUV lasers as the key tools of advanced photolithographic technology. This type of lasers have shortest (among others laser sources) wavelength of powerful monochromatic radiation. It allows generating nano-scale structures and thus creating systems characterized by the maximal spatial resolution as well as by packing density. Modern projection steppers and scanners on the base of KrF excimer lasers (248 nm) are currently used to produce lines in the 110 nm range. Lines as thin as 65 nm are being resolved by systems utilizing ArF excimer lasers emitting light with a wavelength of 193 nm. Further resolution enhancement and improvement of the systems became possible using immersion lithography. In this case laser radiation is focused not on dry substrate but on the one moistened by special immersion liquid. This liquid is typically ultra-pure, deionized water continually circulated to eliminate thermally-induced distortions. Such approach has allowed increasing the numerical aperture by more than 30% and as a result it enables the economical volume production of microchips featuring 45 nm structures.Utilization of synthetic crystal quartz for the purposes DUV-photolithography is caused by its excellent transmission in UV range, high crystallographic perfection and optical homogeneity, chemical resistance and stability to intensive laser radiation.For production of optical components described in this chapter Tydex uses synthetic crystal quartz of precision optical grade (class A1, category “extra”).Main parameters of the used material are as follow:ParameterValueTwinnings, striaes, microbubbles including their conglomerates inclusions and cracksnot allowedPolarization uniformityno visible variations during inspection between crossed polarizersHomogeneity of refractive indexΔ n 3 x 10-6 (TWD = λ /10 per inch of crystal length)Etch channels, cm-2= 30, typicallyAbsorption coefficient, cm-1 (λ=193 nm)= 0.025Birefringence, nm/cm= 10Concentration of main impurities, ppm= 10circular plano-plano thin plates (wafers) For DUV-photolithography Tydex supplies the following components:High level of growth technology which is currently used to produce synthetic crystal quartz does ensure that these parameters will be obtained. But high-involved responsibility induced by application dictates a mandatory requirement to check material quality additionally. Moreover any small piece of used material must be tested without exceptions and with double attention to any details. For this purpose prior to passing an ingot to production we cut and prepare a sample of required overall dimensions and then get it polished. After that we accurately test it under UV excitation using ArF excimer laser. Each ingot (i.e. the sample) even being grown at the same growth run must pass this test successfully. A dose and duration of the excitation simulate the further working conditions of finished optical components and are specially selected to make an attempt to discover material imperfections, mainly the impurities. Only the material withstanding the applied exposure and that is the most important thing – do not get UV-induced degradation of transmission, is passed to production. Otherwise or in case if any single parameter does not meet the above mentioned value, the material is unambiguously rejected and it is ensured that it will be never used for the purposes of discussed application.sector-shape plano-plano plates (sectors) wedge plates of complex design (depolarizers).Severe application' conditions where the components are used dictate the exclusive requirements to parameters of their treatment. Typical specification is as follows:ParameterValueOrientation tolerance, arc. min.+/- 10Surface quality, scr/digHigh-quality polishing, better than 20/10Surface roughness at any square of 350 μm x 260 μm (RMS), nm 0.6TWD ( λ= 633 nm), λ 1Thickness of an element, mm: - wafer - sector - depolarizer (thin edge)0.55575 1.9456 0.9Tolerance zone for overall dimensions (excluding thickness), mm+/-0.05Tolerance zone for thickness (typical value), μm+0.5/-2 (+/-0.5 – state-of-the-art)Non-parallelism of opposite surfaces (for plano-plano elements), arc. sec. 2Tolerance zone for wedge (for wedged elements), arc. min.+/- 25The examples of ZYGO interferograms (TWD) are shown at figures 1-3.Together with each component we supply a certificate of conformance as well as an individual interferometer graph demonstrating surface errors.Fig. 1 Typical ZYGO interferograms (TWD) of D100 mm wafer.Fig. 2 Typical ZYGO interferograms (TWD) of sector.Fig. 3 Typical ZYGO interferograms (TWD) of depolarizer. Besides the components mentioned above and upon your specification & design we will be glad to produce other custom-made components.