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Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique. Growth technique emphasizes on minimizing the defect density to yield optically active material and increasing the average grain size (flake size). Unlike many other graphene oxides, this product is optically active and is ready for 2D semiconductor research. Each growth batch has been characterized by Auger electron and x-ray photoelectron spectroscopy to determine the stoichometry; Raman, PL spectroscopy, and optical absorption for optical properties tests; AFM measurements for the atomic flatness. Product displays PL at ~2.5 eV, sub-bands at 2.2 and 2.0 eV, and broad defect lines at 1.7 eV. Raman spectroscopy measurements yield D, G, 2D, and G+D peaks. Samples come fully saturated with oxygen and the optical properties of the material can be tuned by simple heat treatment. The product is ideal for yielding monolayer onto various substrates within 2-10 minutes. Please contact us for more information.
企业名称
上海巨纳科技有限公司
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信用代码
310109000501433
成立日期
2009-04-01
注册资本
1000
经营范围
通信设备、光电源、生物科技专业领域内的技术开发、技术转让、技术咨询、技术服务;销售仪器仪表,电子元器件,机械设备及配件,通信设备及相关产品(除卫星地面接收装置),日用百货,从事货物及技术的进出口业务。【企业经营涉及行政许可的,凭许可证件经营】
上海巨纳科技有限公司
公司地址
上海市虹口区宝山路778号海伦国际大厦5楼
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公司名称： 上海巨纳科技有限公司
公司地址： 上海市虹口区宝山路778号海伦国际大厦5楼 联系人： 袁文军 邮编： 200081
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