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光电二极管(PIN)
新势力光电供应光电二极管(PIN)，用于将光信号转换为电信号，形成光电效应/光电池。PIN 光电二极管应用广泛，包括： 安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天。
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UV/blue sensitive photodiodes
|
|||||
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Type No.
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Active area
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Dark current
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Rise time
|
||
|
Chip
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Package
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Size
|
Area
|
5V
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410nm 5V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
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PS1-2
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TO52
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1.0x1.0
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1
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0.01
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50
|
|
PS1-2
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LCC6.1
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1.0x1.0
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1
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0.01
|
50
|
|
PC5-2
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TO5
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Ø 2.52
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5
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0.3
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150
|
|
PS7-2
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TO5
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2.66x2.66
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7
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0.4
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200
|
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PC10-2
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TO5
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Ø 3.57
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10
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1
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300
|
|
PS13-2
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TO5
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3.5x3.5
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13
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1
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300
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PS33-2
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TO8
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5.7x5.7
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33
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2
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600
|
|
PC50-2
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BNC
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Ø 7.98
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50
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5
|
1000
|
|
PS100-2
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BNC
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10x10
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100
|
10
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2000
|
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PS100-2
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CERpin
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10x10
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100
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10
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2000
|
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Band pass filter modules: PC10-2 TO5i with center wavelength 254nm or 300nm or 350nm
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|||||
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Blue/green sensitive photodiodes
|
|||||
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Type No.
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Active area
|
Dark current
|
Rise time
|
||
|
Chip
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Package
|
Size
|
Area
|
5V
|
410nm 5V 50Ω
|
|
mm
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mm2
|
nA
|
ns
|
||
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PC1-6b
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TO52S3
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Ø 1.13
|
1
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0.05
|
10
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PC5-6b
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TO5
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Ø 2.52
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5
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0.1
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20
|
|
PS7-6b
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TO5
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2.7x2.7
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7
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0.15
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25
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PC10-6b
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TO5
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Ø 3.57
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10
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0.2
|
45
|
|
PS13-6b
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TO5
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3.5x3.5
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13
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0.25
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50
|
|
PS33-6b
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TO8
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5.7x5.7
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33
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0.6
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140
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PS100-6b
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CERpin
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10x10
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100
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1
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200
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PS100-6b
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LCC10S
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10x10
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100
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1
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200
|
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Band pass filter modules: PR20-6b TO5i with center wavelength 488nm or 550nm or 633nm or 680nm
|
|||||
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High speed photodiodes (for fast rise times at low reverse voltages)
|
|||||
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Type No.
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Active area
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Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
20V
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850nm 20V 50Ω
|
|
mm
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mm2
|
nA
|
ns
|
||
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PS0.25-5
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LCC6.1
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0.5x0.5
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0.25
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0.1
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0.4
|
|
PS0.25-5
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TO52S3
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0.5x0.5
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0.25
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0.1
|
0.4
|
|
PC0.55-5
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TO52S1
|
Ø 0.84
|
0.55
|
0.2
|
1
|
|
PC0.55-5
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LCC6.1
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Ø 0.84
|
0.55
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0.2
|
1
|
|
PS1-5
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LCC6.1
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1.0x1.0
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1
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0.2
|
1.5
|
|
PS1-5
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TO52S3
|
1.0x1.0
|
1
|
0.2
|
1.5
|
|
PS7-5
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TO5
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2.7x2.7
|
7
|
0.5
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2
|
|
PS11.9-5
|
TO5
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3.45x3.45
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11.9
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1
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3
|
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PC20-5
|
TO8
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Ø 5.05
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20
|
2
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3.5
|
|
PS33-5
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TO8
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5.7x5.7
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33
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2
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3.5
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PS100-5
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CERpinS
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10x10
|
100
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2
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5
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PS100-5
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LCC10S
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10x10
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100
|
2
|
5
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|
High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
20V
|
850nm 20V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
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PS0.25-5t
|
LCC6.1
|
0.5x0.5
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0.25
|
1
|
0.4
|
|
PC0.55-5t
|
LCC6.1
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Ø 0.84
|
0.55
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5
|
1
|
|
PC0.55-5t
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T1 3/4
|
Ø 0.84
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0.55
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5
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1
|
|
PC0.55-5t
|
T1 3/4 black
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Ø 0.84
|
0.55
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5
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1
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PS1-5t
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LCC6.1
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1.0x1.0
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1
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1
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1
|
|
IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
10V
|
850nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
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PC1-6
|
TO52S1
|
Ø 1.13
|
1
|
0.05
|
10
|
|
PC1-6
|
TO52S3
|
Ø 1.13
|
1
|
0.05
|
10
|
|
PC5-6
|
TO5
|
Ø 2.52
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5
|
0.1
|
13
|
|
PS7-6
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TO5
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2.66×2.66
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7
|
0.1
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15
|
|
PC10-6
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TO5
|
Ø 3.57
|
10
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0.2
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20
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PS13-6
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TO5
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3.5×3.5
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13
|
0.2
|
20
|
|
PC20-6
|
TO8
|
Ø 5.05
|
20
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0.3
|
25
|
|
PC50-6
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TO8S
|
Ø 7.98
|
50
|
0.5
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30
|
|
PS100-6
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BNC
|
10×10
|
100
|
0.8
|
50
|
|
PS100-6
|
CERpinS
|
10×10
|
100
|
0.8
|
50
|
|
PS100-6
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LCC10S
|
10×10
|
100
|
0.8
|
50
|
|
IR photodiodes with fully depletable (very low capacitance levels)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
10V
|
905nm 10V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
PC5-7
|
TO8i
|
Ø 2.52
|
5
|
0.05
|
45
|
|
PC10-7
|
TO8i
|
Ø 3.57
|
10
|
0.1
|
50
|
|
PC20-7
|
TO8Si
|
Ø 5.05
|
20
|
0.2
|
50
|
|
PS100-7
|
LCC10
|
10×10
|
100
|
1.5
|
50
|
|
QP100-7
|
LCC10
|
10×10
|
4×25
|
0.5
|
50
|
|
Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources)
|
|||||
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
|
Chip
|
Package
|
Size
|
Area
|
150V
|
1064nm 150V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
||
|
QP22-Q
|
TO8S
|
Ø 5.3
|
4×5.7
|
1.5
|
5
|
|
QP45-Q
|
TO8S
|
6.7×6.7
|
4×10.96
|
3
|
5
|
|
QP154-Q
|
TO1032i
|
Ø 14.0
|
4×38.5
|
10
|
6
|
|
PIN Series
|
Optimized for
|
Special features
|
Application
|
|
Series-2
|
200-500 nm
|
UV / Blue enhanced
|
Analytical instruments, readout for scintillators
|
|
Series-6b
|
400-650 nm
|
Blue / Green enhanced
|
Photometric illuminometer
|
|
Series-5b
|
360-550 nm
|
High-speed Epitaxy, blue / green enhanced
|
Optical fiber communication, high speed photometry
|
|
Series-5t
|
400-850 nm
|
High-speed Epitaxy, low voltage (3.5V)
|
|
|
Series-5
|
450-950 nm
|
High-speed Epitaxy
|
|
|
Series-6
|
700-950 nm
|
General purpose, low dark current, fast response
|
Precision photometry, analytical instruments
|
|
Series-7
|
700-1100 nm
|
Low capacity, full depletable
|
High energy physics
|
|
Series-Q
|
900-1100 nm
|
Enhanced NIR sensitivity, low voltage, full depletable
|
YAG laser detection
|
|
Series-i
|
600-1700 nm
|
InGaAs photodiodes, high IR sensitivity, low dark current
|
Eye-sate laser detection
|
|
Series-X
|
Ionizing radiation
|
With or without scintillator, ultra
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Medical, security, material
|
-
-
光电管放大器
-
-
-
雪崩二极管(APD)
-
-
-
Semrock滤光片
-
-
-
紫外LED
-
用户单位
采购时间
采购数量
嘉兴凯实生物科技有限公司
2012/02/20
4
光学仪器组件NewOpto的工作原理介绍
光学仪器组件NewOpto的使用方法?
NewOpto多少钱一台?
光学仪器组件NewOpto可以检测什么？
光学仪器组件NewOpto使用的注意事项？
NewOpto的说明书有吗？
光学仪器组件NewOpto的操作规程有吗？
光学仪器组件NewOpto报价含票含运吗？
NewOpto有现货吗？
更多
企业名称
杭州新势力光电技术有限公司
企业信息已认证
企业类型
信用代码
330106000173891
成立日期
2011-05-06
注册资本
100
经营范围
服务:光电产品、科学仪器、光机电一体化、光学类产品及系统的技术开发、技术服务、成果转让;批发、零售:光电科学仪器,光电元器件,仪器仪表;货物进出口(国家法律、行政法规禁止的项目除外,法律、行政法规限制的项目取得许可证后方可经营);其他无需报经审批的一切合法项目。(依法须经批准的项目,经相关部门批准后方可开展经营活动)
杭州新势力光电技术有限公司
公司地址
杭州市西湖区西溪世纪中心2号楼828室
客服电话
