NR21-20000P
Processing
The film of 20 μm in thickness
Preliminary process recipe guidelines for patterning 20 μm thick Negative Resist NR21-20000P
film, with application of a single spin coat:
1. Application of NR21-20000P resist from a static dispense by spin coating at 3000 rpm for 40
s. Acceleration from 0 to 3000 rpm is conducted in less than 1 s. Dispense nozzles should be
removed from dispense line since they produce film thickness nonuniformity. Amount of
dispensed NR21-20000P is 7 mL per 6 inch diameter wafer.
2. Softbake on a hotplate at 150℃ for 120 s.
3. Substrate cooling in a carrier for 900 s. Avoid placing the substrate on metal surface.
4. Resist exposure in a tool emitting 365 nm wavelength.
5. Post-exposure bake on a hotplate at 80℃ for 300 s.
6. Substrate cooling in a carrier for 900 s. Avoid placing the substrate on metal surface.
7. Resist development in Resist Developer RD6 by immersion and agitation at 20-25℃.
Development time for 20 μm thick film is 120 s.
8. Resist rinse in deionized water until water resistivity reaches prescribed limit.
9. Drying of resist.
10. Electroplating process step.
11. Removal of resist in Resist Remover RR41.
The above procedure refers to substrates, which are good conductors of heat such as silicon, GaAs,
etc. When a substrate is a poor conductor of heat, such as glass, bake times need to be increased by
the time it takes to heat up a substrate to prescribed temperature.
The film of 40 μm in thickness
Preliminary process recipe guidelines for patterning 40 μm thick Negative Resist NR21-20000P
film, with application of a single spin coat:
1. Application of NR21-20000P resist from a static dispense by spin coating at 3150 rpm for 10
s. Acceleration from 0 to 3150 rpm is conducted in less than 1 s. Dispense nozzles should be
removed from dispense line since they produce film thickness nonuniformity. Amount of
dispensed NR21-20000P is 7 mL per 6 inch diameter wafer.
2. Softbake on a hotplate at 150℃for 180 s.
3. Substrate cooling in a carrier for 900 s. Avoid placing the substrate on metal surface.
4. Resist exposure in a tool emitting 365 nm wavelength.
5. Post-exposure bake on a hotplate at 80℃ for 300 s.
6. Substrate cooling in a carrier for 900 s. Avoid placing the substrate on metal surface.
7. Resist development in Resist Developer RD6 by immersion and agitation at 20-25℃.
Development time for 50 μm thick film is 180 s at 23℃..
8. Resist rinse in deionized water until water resistivity reaches prescribed limit.
9. Drying of resist.
10. Electroplating process step.
11. Removal of resist in Resist Remover RR41.
The above procedure refers to substrates, which are good conductors of heat such as silicon, GaAs,
etc. When a substrate is a poor conductor of heat, such as glass, bake times need to be increased by
the time it takes to heat up a substrate to prescribed temperature.
The film of 50 μm in thickness
Preliminary process recipe guidelines for patterning 50 μm thick Negative Resist NR21-20000P
film, with application of a single spin coat:
1. Application of NR21-20000P resist from a static dispense by spin coating at 1500 rpm for 10
s. Acceleration from 0 to 1500 rpm is conducted in less than 1 s. Dispense nozzles should be
removed from dispense line since they produce film thickness nonuniformity. Amount of
dispensed NR21-20000P is 7 mL per 6 inch diameter wafer.
2. Softbake on a hotplate at 150℃for 150 s.
3. Substrate cooling in a carrier for 900 s. Avoid placing the substrate on metal surface.
4. Resist exposure in a tool emitting 365 nm wavelength.
5. Post-exposure bake on a hotplate at 80℃ for 300 s.
6. Substrate cooling in a carrier for 900 s. Avoid placing the substrate on metal surface.
7. Resist development in Resist Developer RD6 by immersion and agitation at 20-25℃.
Development time for 50 μm thick film is 150 s.
8. Resist rinse in deionized water until water resistivity reaches prescribed limit.
9. Drying of resist.
10. Electroplating process step.
11. Removal of resist in Resist Remover RR41.
The above procedure refers to substrates, which are good conductors of heat such as silicon, GaAs,
etc. When a substrate is a poor conductor of heat, such as glass, bake times need to be increased by
the time it takes to heat up a substrate to prescribed temperature.
The film of 100 μm in thickness
Preliminary process recipe guidelines for patterning 100 μm thick Negative Resist NR21-20000P
film, with application of a single spin coat and two hotplate softbakes:
1. Application of NR21-20000P resist from a static dispense by spin coating at 1200 rpm for 10
s. Acceleration from 0 to 1200 rpm is conducted in less than 1 s. Dispense nozzles should be
removed from dispense line since they produce film thickness nonuniformity. Amount of
dispensed NR21-20000P is 7 mL per 6 inch diameter wafer.
2. Delay after coating for 300 s.
3. Softbake on a hotplate at 80℃for 600 s, followed by:
4. Softbake on a hotplate at 150℃for 300 s.
5. Substrate cooling in a carrier for 900 s. Avoid placing the substrate on metal surface.
8. Resist rinse in deionized water until water resistivity reaches prescribed limit.
9. Drying of resist.
10. Electroplating process step.
11. Removal of resist in Resist Remover RR41.
The above procedure refers to substrates, which are good conductors of heat such as silicon, GaAs,
etc. When a substrate is a poor conductor of heat, such as glass, bake times need to be increased by
the time it takes to heat up a substrate to prescribed temperature.
The film of 50 μm in thickness
Preliminary process recipe guidelines for patterning 50 μm thick Negative Resist NR21-20000P
film, with application of a single spin coat:
1. Application of NR21-20000P resist from a static dispense by spin coating at 1500 rpm for 10
s. Acceleration from 0 to 1500 rpm is conducted in less than 1 s. Dispense nozzles should be
removed from dispense line since they produce film thickness nonuniformity. Amount of
dispensed NR21-20000P is 7 mL per 6 inch diameter wafer.
2. Softbake on a hotplate at 150℃for 150 s.
3. Substrate cooling in a carrier for 900 s. Avoid placing the substrate on metal surface.
4. Resist exposure in a tool emitting 365 nm wavelength.
5. Post-exposure bake on a hotplate at 80℃ for 300 s.
6. Substrate cooling in a carrier for 900 s. Avoid placing the substrate on metal surface.
7. Resist development in Resist Developer RD6 by immersion and agitation at 20-25℃.
Development time for 50 μm thick film is 150 s.
8. Resist rinse in deionized water until water resistivity reaches prescribed limit.
9. Drying of resist.
10. Electroplating process step.
11. Removal of resist in Resist Remover RR41.
The above procedure refers to substrates, which are good conductors of heat such as silicon, GaAs,
etc. When a substrate is a poor conductor of heat, such as glass, bake times need to be increased by
the time it takes to heat up a substrate to prescribed temperature.
The film of 100 μm in thickness
Preliminary process recipe guidelines for patterning 100 μm thick Negative Resist NR21-20000P
film, with application of a single spin coat and two hotplate softbakes:
1. Application of NR21-20000P resist from a static dispense by spin coating at 1200 rpm for 10
s. Acceleration from 0 to 1200 rpm is conducted in less than 1 s. Dispense nozzles should be
removed from dispense line since they produce film thickness nonuniformity. Amount of
dispensed NR21-20000P is 7 mL per 6 inch diameter wafer.
2. Delay after coating for 300 s.
3. Softbake on a hotplate at 80℃for 600 s, followed by:
4. Softbake on a hotplate at 150℃for 300 s.
5. Substrate cooling in a carrier for 900 s. Avoid placing the substrate on metal surface.
企业名称
陕西思的信息资讯有限公司
企业信息已认证
企业类型
信用代码
610000100148177
成立日期
2008-10-14
注册资本
100
经营范围
2-庚酮、环己酮、正丁醇、苯甲醚、环戊酮、乙酸[含量>80%]、丙二醇乙醚、甲硫醚、乙酸正丁酯、乙二醇异丙醚、丙酸乙酯、乙酸正丙酯(剧毒化学品、成品油、易制爆危险化学品除外)(无储存场所)(危险化学品经营许可证有效期至2020年12月26日);货物与技术的进出口经营(国家限制、禁止和须经审批进出口的货物和技术除外);机电设备、仪器仪表、科研仪器、精细化学品、化工产品及化工原材料(不含危险、监控、易制毒化学品)、工业设备的销售;计算机软硬件的开发、销售;计算机系统集成(须经审批除外);网站的开发、建设;广告的设计、制作、代理、发布(须经审批除外);企业营销策划;市场营销策划;展览展示活动的组织、策划;公关咨询;光刻工艺设备、颗粒表征仪器、干法蚀刻设备和湿法蚀刻设备的售后维修、服务。(依法须经批准的项目,经相关部门批准后方可开展经营活动)
陕西思的信息资讯有限公司
公司地址
西安市高新区高新路65号信力大厦11105室
客服电话