Patterned growth and field emission properties of vertically（MPECVD）

Vertically aligned carbon nanotubes were grown selectively on patterned Ni thin films by microwave plasma-enhanced chemical vapor deposition and their field emission properties were investigated using a diode-structure. Ni thin films patterned with a form of dot-arrays were prepared using a shadow mask having an array of holes. The nanotubes were found to be well-graphitized with multiwalled structures. The measurements of field emission properties revealed that the carbon nanotube tips emitted high current density at low macroscopic electric field. The Fowler
NordheimŽF
N.plot clearly showed two characteristic regions where the current saturates at the high electric field region. It was found that the saturation behavior was caused by the adsorbates-enhanced field emission mechanism. Eliminating the adsorbates resulted in no saturation behavior, increasing turn-on field, decreasing current, and increasing field enhancement factor. Using ZnSCu,Al phosphor, very bright and uniform emission patterns were obtained