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光电二极管
基本信息:
价格:面议
供货周期:现货
品牌:完美光子
 
参数规格:
具体参数见产品详情
                     
  • 产品介绍
  •      
产品介绍

光电二极管(PIN)

筱晓光子供应光电二极管(PIN),用于将光信号转换为电信号,形成光电效应/光电池。PIN 光电二极管应用广泛,包括: 安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天。

UV/blue sensitive photodiodes

Type No.

Active area

Dark current

Rise time

Chip

Package

Size

Area

5V

410nm 5V 50Ω

mm

mm2

nA

ns

PS1-2

TO52

1.0x1.0

1

0.01

50

PS1-2

LCC6.1

1.0x1.0

1

0.01

50

PC5-2

TO5

? 2.52

5

0.3

150

PS7-2

TO5

2.66x2.66

7

0.4

200

PC10-2

TO5

? 3.57

10

1

300

PS13-2

TO5

3.5x3.5

13

1

300

PS33-2

TO8

5.7x5.7

33

2

600

PC50-2

BNC

? 7.98

50

5

1000

PS100-2

BNC

10x10

100

10

2000

PS100-2

CERpin

10x10

100

10

2000

Band pass filter modules: PC10-2 TO5i with center wavelength 254nm or 300nm or 350nm

Blue/green sensitive photodiodes

Type No.

Active area

Dark current

Rise time

Chip

Package

Size

Area

5V

410nm 5V 50Ω

mm

mm2

nA

ns

PC1-6b

TO52S3

? 1.13

1

0.05

10

PC5-6b

TO5

? 2.52

5

0.1

20

PS7-6b

TO5

2.7x2.7

7

0.15

25

PC10-6b

TO5

? 3.57

10

0.2

45

PS13-6b

TO5

3.5x3.5

13

0.25

50

PS33-6b

TO8

5.7x5.7

33

0.6

140

PS100-6b

CERpin

10x10

100

1

200

PS100-6b

LCC10S

10x10

100

1

200

Band pass filter modules: PR20-6b TO5i with center wavelength 488nm or 550nm or 633nm or 680nm

High speed photodiodes (for fast rise times at low reverse voltages)

Type No.

Active area

Dark current

Rise time

Chip

Package

Size

Area

20V

850nm 20V 50Ω

mm

mm2

nA

ns

PS0.25-5

LCC6.1

0.5x0.5

0.25

0.1

0.4

PS0.25-5

TO52S3

0.5x0.5

0.25

0.1

0.4

PC0.55-5

TO52S1

? 0.84

0.55

0.2

1

PC0.55-5

LCC6.1

? 0.84

0.55

0.2

1

PS1-5

LCC6.1

1.0x1.0

1

0.2

1.5

PS1-5

TO52S3

1.0x1.0

1

0.2

1.5

PS7-5

TO5

2.7x2.7

7

0.5

2

PS11.9-5

TO5

3.45x3.45

11.9

1

3

PC20-5

TO8

? 5.05

20

2

3.5

PS33-5

TO8

5.7x5.7

33

2

3.5

PS100-5

CERpinS

10x10

100

2

5

PS100-5

LCC10S

10x10

100

2

5

High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)

Type No.

Active area

Dark current

Rise time

Chip

Package

Size

Area

20V

850nm 20V 50Ω

mm

mm2

nA

ns

PS0.25-5t

LCC6.1

0.5x0.5

0.25

1

0.4

PC0.55-5t

LCC6.1

? 0.84

0.55

5

1

PC0.55-5t

T1 3/4

? 0.84

0.55

5

1

PC0.55-5t

T1 3/4 black

? 0.84

0.55

5

1

PS1-5t

LCC6.1

1.0x1.0

1

1

1

IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ? and X-radiation detection)

Type No.

Active area

Dark current

Rise time

Chip

Package

Size

Area

10V

850nm 10V 50Ω

mm

mm2

nA

ns

PC1-6

TO52S1

? 1.13

1

0.05

10

PC1-6

TO52S3

? 1.13

1

0.05

10

PC5-6

TO5

? 2.52

5

0.1

13

PS7-6

TO5

2.66×2.66

7

0.1

15

PC10-6

TO5

? 3.57

10

0.2

20

PS13-6

TO5

3.5×3.5

13

0.2

20

PC20-6

TO8

? 5.05

20

0.3

25

PC50-6

TO8S

? 7.98

50

0.5

30

PS100-6

BNC

10×10

100

0.8

50

PS100-6

CERpinS

10×10

100

0.8

50

PS100-6

LCC10S

10×10

100

0.8

50

IR photodiodes with fully depletable (very low capacitance levels)

Type No.

Active area

Dark current

Rise time

Chip

Package

Size

Area

10V

905nm 10V 50Ω

mm

mm2

nA

ns

PC5-7

TO8i

? 2.52

5

0.05

45

PC10-7

TO8i

? 3.57

10

0.1

50

PC20-7

TO8Si

? 5.05

20

0.2

50

PS100-7

LCC10

10×10

100

1.5

50

QP100-7

LCC10

10×10

4×25

0.5

50

Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources)

Type No.

Active area

Dark current

Rise time

Chip

Package

Size

Area

150V

1064nm 150V 50Ω

mm

mm2

nA

ns

QP22-Q

TO8S

? 5.3

4×5.7

1.5

5

QP45-Q

TO8S

6.7×6.7

4×10.96

3

5

QP154-Q

TO1032i

? 14.0

4×38.5

10

6

 

PIN Series

Optimized for

Special features

Application

Series-2

200-500 nm

UV / Blue enhanced

Analytical instruments, readout for scintillators

Series-6b

400-650 nm

Blue / Green enhanced

Photometric illuminometer

Series-5b

360-550 nm

High-speed Epitaxy, blue / green enhanced

Optical fiber communication, high speed photometry

Series-5t

400-850 nm

High-speed Epitaxy, low voltage (3.5V)

Series-5

450-950 nm

High-speed Epitaxy

Series-6

700-950 nm

General purpose, low dark current, fast response

Precision photometry, analytical instruments

Series-7

700-1100 nm

Low capacity, full depletable

High energy physics

Series-Q

900-1100 nm

Enhanced NIR sensitivity, low voltage, full depletable

YAG laser detection

Series-i

600-1700 nm

InGaAs photodiodes, high IR sensitivity, low dark current

Eye-sate laser detection

Series-X

Ionizing radiation

With or without scintillator, ultra

Medical, security, material

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