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SESAM 1064nm半导体可饱和吸收镜
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SESAM 1064nm半导体可饱和吸收镜

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基本信息：
价格：￥ 3000
供货周期：一周
品牌：Batop
供应商： 上海屹持光电技术有限公司
货号：

4202639

　
参数规格：
规格：
1个
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产品介绍

    BATOP 现已成为用于被动锁模激光器的可饱和吸收体的优良供应商。可饱和吸收产品集合了各式各样的不同的器件，从可饱和吸收镜(SESAM)，到可饱和输出镜(SOC)和用于透过应用的可饱和吸收体(SA)。迄今为止，可饱和吸收产品已经覆盖了800nm到2.6μm的常用激光波长范围。


> SAM product list

Wavelength region   790 nm ... 830 nm:  800 nm

Wavelength region   910 nm ... 990 nm:  940 nm | 980 nm

Wavelength region 1020 nm ... 1150 nm:1040 nm | 1064 nm | 1100 nm

Wavelength region 1110 nm ... 1320 nm:1150 nm | 1300 nm

Wavelength region 1320 nm ... 1460 nm:1340 nm | 1420 nm

Wavelength region 1470 nm ... 1660 nm:1510 nm | 1550 nm | 1645 nm

Wavelength region 1900 nm ... 3200 nm:2000 nm | 2150 nm | 2400 nm | 3000 nm

SAM? - saturable absorber mirror λ =1064 nm

Fast SAMs 1064 nm with relaxation time τ ~ 1 ps-x

Part No.         helpDelivery
time		DescriptionData
PDF
SAM-1064-0.7-1ps-x1 week SAM: λ = 1064 nm, absorptance 0.7 %, Δ R = 0.4 %,
 τ ~ 1 ps		PDF Data
SAM-1064-1-1ps-x1 week SAM: λ = 1064 nm, absorptance 1 %, Δ R = 0.6 %,
 τ ~ 1 ps		PDF Data
SAM-1064-1.5-1ps-x1 week SAM: λ = 1064 nm, absorptance 1.5 %, Δ R = 0.8 %,
 τ ~ 1 ps		PDF Data
SAM-1064-2-1ps-x1 week SAM: λ = 1064 nm, absorptance 2 %, Δ R = 1.2 %,
 τ ~ 1 ps		PDF Data
SAM-1064-3-1ps-x1 week SAM: λ = 1064 nm, absorptance 3 %, Δ R = 1.6 %,
 τ ~ 1 ps		PDF Data
SAM-1064-3.5-1ps-x1 week SAM: λ = 1064 nm, absorptance 3.5 %, Δ R = 2 %,
 τ ~ 1 ps		PDF Data
SAM-1064-4-1ps-x1 week SAM: λ = 1064 nm, absorptance 4 %, Δ R = 2.4 %,
 τ ~ 1 ps		PDF Data
SAM-1064-5-1ps-x1 week SAM: λ = 1064 nm, absorptance 5 %, Δ R = 3 %, 
 τ ~ 1 ps		PDF Data
SAM-1064-6-1ps-x1 week SAM: λ = 1064 nm, absorptance 6 %, Δ R = 3.5 %, 
 τ ~ 1 ps		PDF Data
SAM-1064-8-500fs-x1 week SAM: λ = 1064 nm, absorptance 8 %, Δ R = 5 %PDF Data
SAM-1064-10-1ps-x1 week SAM: λ = 1064 nm, absorptance 10 %, Δ R = 6 %,
 τ ~ 1 ps		PDF Data
SAM-1064-13-500fs-x1 week SAM: λ = 1064 nm, absorptance 13 %, Δ R = 8 %PDF Data
SAM-1064-18-500fs-x1 week SAM: λ = 1064 nm, absorptance 18 %, Δ R = 10 %,
 τ ~ 500 fs, antiresonant multi quantum well structure,		PDF Data
SAM-1064-23-1ps-x1 week SAM: λ = 1064 nm, absorptance 28 %, Δ R = 15 %,
 τ ~ 1 ps, antiresonant multi quantum well structure,		PDF Data
SAM-1064-26-1ps-x1 week SAM: λ = 1064 nm, absorptance 28 %, Δ R = 13 %,
 τ ~ 1 ps, resonant multi quantum well structure,		PDF Data
SAM-1064-38-1ps-x1 week SAM: λ = 1064 nm, absorptance 38 %, Δ R = 23 %,
 τ ~ 1 ps, antiresonant multi quantum well structure,		PDF Data
SAM-1064-70-500fs-x1 week SAM: λ = 1064 nm, absorptance 70 %, Δ R = 40 %,
 τ ~ 500 fs		PDF Data
passive heat sink1 week passive heat sink for fiber coupled SAMPDF Data

SAMs 1064 nm with relaxation time τ ~ 3 ps

Part No.        helpDelivery
time		DescriptionData
PDF
SAM-1064-3-5ps-x1 week SAM: λ = 1064 nm, absorptance 3 %, Δ R = 1.8 %, τ ~ 5 psPDF Data
SAM-1064-5-3ps-x1 week SAM: λ = 1064 nm, absorptance 5 %, Δ R = 3 %, τ ~ 3psPDF Data
SAM-1064-12-5ps-x1 week SAM: λ = 1064 nm, absorptance 12 %, Δ R = 7 %, τ ~ 5ps, antiresonant structurePDF Data
SAM-1064-18-5ps-x1 week SAM: λ = 1064 nm, absorptance 18 %, Δ R = 10 %, τ ~ 5ps, antiresonant structurePDF Data
SAM-1064-48-4ps-x1 week SAM: λ = 1064 nm, absorptance 48 %, Δ R = 28 %, τ 4 ps, for fiber laser mode-locking at 1064 nmPDF Data
SAM-1064-50-5ps-x1 week SAM: λ = 1064 nm, absorptance 50 %, Δ R = 25 %, τ ~ 5ps, resonant absorber structurePDF Data
SAM-1064-57-4ps-x1 week SAM: λ = 1064 nm, absorptance 57 %, Δ R = 31 %, τ ~ 4 ps, antiresonant structurePDF Data
SAM-1064-70-3ps-x1 week SAM: λ = 1064 nm, absorptance 70 %, Δ R = 44 %, τ ~ 3ps, resonant multi quantum well structurePDF Data

SAMs 1064 nm with relaxation time τ ~ 10 ps

Part No.  help       Delivery
time		DescriptionData
PDF
SAM-1064-0.6-10ps-x1 week SAM: λ = 1064 nm, absorptance 0.6 %, Δ R = 0.4 %,
 τ ~ 10ps		PDF Data
SAM-1064-1-10ps-x1 week SAM: λ = 1064 nm, absorptance 1 %, Δ R = 0.6 %,
 τ ~ 10ps		PDF Data
SAM-1064-2-10ps-x1 week SAM: λ = 1064 nm, absorptance 2 %, Δ R = 1.2 %,
 τ ~ 10ps		PDF Data
SAM-1064-3-10ps-x1 week SAM: λ = 1064 nm, absorptance 3 %, Δ R = 1.8 %,
 τ ~ 10ps		PDF Data
SAM-1064-4-10ps-x1 week SAM: λ = 1064 nm, absorptance 4 %, Δ R = 3 %,
 τ ~ 10 ps		PDF Data
SAM-1064-6-10ps-x1 week SAM: λ = 1064 nm, absorptance 6 %, Δ R = 4 %,
 τ = 10 ps		PDF Data
SAM-1064-12-16ps-x1 week SAM: λ = 1064 nm, absorptance 12 %, Δ R = 6 %,
 τ ~ 16 ps		PDF Data
SAM-1064-19-10ps-x1 week SAM: λ = 1064 nm, absorptance 19 %, Δ R = 13 %,
 τ 10 ps, antiresonant multi quantum well structure for fiber laser mode-locking,		PDF Data
SAM-1064-30-8ps-x1 week SAM: λ = 1064 nm, absorptance 30 %, Δ R = 13 %,
 τ ~ 8 ps, antiresonant multi quantum well structure for fiber laser mode-locking,		PDF Data
SAM-1064-38-7ps-x1 week SAM: λ = 1064 nm, absorptance 38 %, Δ R = 23 %,
 τ ~ 7 ps, resonant multi quantum well structure for fiber laser mode-locking,		PDF Data
SAM-1064-38-15ps-x1 week SAM: λ = 1064 nm, absorptance 38 %, Δ R = 33 %,
 τ ~ 15 ps, antiresonant multi quantum well structure for fiber laser mode-locking		PDF Data
SAM-1064-40-9ps-x1 week SAM: λ = 1064 nm, absorptance 40 %, Δ R = 25 %,
 τ 9 ps		PDF Data
SAM-1064-50-10ps-x1 week SAM: λ = 1064 nm, absorptance 50 %, Δ R = 33 %,
 τ ~ 10 ps		PDF Data
SAM-1064-50-12ps-x1 week SAM: λ = 1064 nm, absorptance 50 %, Δ R = 40 %,
 τ ~ 12 ps		PDF Data
SAM-1064-55-10ps-x1 week SAM: λ = 1064 nm, absorptance 55 %, Δ R = 40 %,
 τ ~ 10 ps, antiresonant multi quantum well structure		PDF Data
SAM-1064-65-10ps-x1 week SAM: λ = 1064 nm, absorptance 65 %, Δ R = 54 %,
 τ = 10 ps, resonant multi quantum well structure		PDF Data
passive heat sink1 week passive heat sink for fiber coupled SAMPDF Data

SAMs 1064 nm with relaxation time τ ~ 25 ps

Part No.  helpDelivery
time		DescriptionData
PDF
SAM-1064-3-25ps-x1 week SAM: λ = 1064 nm, absorptance 3 %, Δ R = 2 %,tau; ~ 25 psPDF Data
SAM-1064-4-25ps-x1 week SAM: λ = 1064 nm, absorptance 4 %, Δ R = 3 %, τ ~ 25 psPDF Data
SAM-1064-5-25ps-x1 week SAM: λ = 1064 nm, absorptance 5 %, Δ R = 3 %, τ = 25 psPDF Data
SAM-1064-8-25ps-x1 week SAM: λ = 1064 nm, absorptance 8 %, Δ R = 6 %, τ ~ 25 ps, antiresonant structurePDF Data
SAM-1064-15-30ps-x1 week SAM: λ = 1064 nm, absorptance 15 %, Δ R = 9 %, τ ~ 30 psPDF Data
SAM-1064-17-25ps-x1 week SAM: λ = 1064 nm, absorptance 17 %, Δ R = 10 %, τ ~ 25 psPDF Data
SAM-1064-20-30ps-x1 week SAM: λ = 1064 nm, absorptance 20 %, Δ R = 15 %, τ ~ 30 psPDF Data
SAM-1064-25-25ps-x1 week SAM: λ = 1064 nm, absorptance 25 %, Δ R = 19 %, τ ~ 25 ps, antiresonant structurePDF Data
SAM-1064-28-25ps-x1 week SAM: λ = 1064 nm, absorptance 28 %, Δ R = 20 %, τ ~ 25 ps, antiresonant structurePDF Data
SAM-1064-30-30ps-x1 week SAM: λ = 1064 nm, absorptance 30 %, Δ R = 20 %, τ ~ 30 ps, antiresonant structurePDF Data
SAM-1064-50-20ps-x1 week SAM: λ = 1064 nm, absorptance 50 %, Δ R = 40 %, τ ~ 20 ps, antiresonant structurePDF Data

SAMs 1064 nm with relaxation time τ ~ 100 ps for Q-switched mictrochip laser

Part No.  helpDelivery
time		DescriptionData
PDF
SAM-1064-9-47ps-x1 week SAM: λ = 1064 nm, absorptance 9 %, Δ R = 5.7 %, τ ~ 47 ps, reflectance at 808 nm: 67 %PDF Data
SAM-1064-10-47ps-x1 week SAM: λ = 1064 nm, absorptance 10 %, Δ R = 6 %, τ ~ 47 ps, reflectance at 808 nm: 96 %PDF Data
SAM-1064-13-124ps-x1 week SAM: λ = 1064 nm, absorptance 13 %, Δ R = 7 %, τ ~ 124 ps, reflectance at 808 nm: 70 %PDF Data
SAM-1064-22-47ps-x1 week SAM: λ = 1064 nm, absorptance 22 %, Δ R = 13 %, τ ~ 47 ps, reflectance at 808 nm: 50 %PDF Data


SESAM 1064nm半导体可饱和吸收镜信息由上海屹持光电技术有限公司为您提供，如您想了解更多关于SESAM 1064nm半导体可饱和吸收镜报价、型号、参数等信息，欢迎来电或留言咨询。

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