晶体结构

光子晶体光纤/微结构光纤(PCF）所属类别： ? 光纤/光纤器件 ? 其他特种光纤/光子晶体光纤 所属品牌： 产品简介 昊量光电提供各种定制型光子晶体光纤（PCF，微结构光纤）！ 光子晶体光纤(Photonic Crystal Fibers,PCF)又称为微结构光纤（Micro-Structured Fibers, MSF)，这种光线的横截面上有较复杂的折射率分布，通常含有不同排列形式的小孔，这些小孔的尺度与光波波长大致在同一量级且贯穿器件的整个长度，光波可以被限制在低折射率的光纤芯区传播。昊量光电提供各种光子晶体光纤。 关键词：光子晶体光纤，Photonic Crystal Fibers, PCF，微结构光纤，Micro-Structured Fibers， 结构光纤 光子晶体光纤(Photonic Crystal Fibers,PCF)又称为微结构光纤（Micro-Structured Fibers, MSF)，这种光线的横截面上有较复杂的折射率分布，通常含有不同排列形式的小孔，这些小孔的尺度与光波波长大致在同一量级且贯穿器件的整个长度，光波可以被限制在低折射率的光纤芯区传播。 光子晶体光纤（微结构光纤）按照其导光机理可以分为两大类：折射率导光型（IG-PCF)和带隙引导型（PCF）。 折射率引导型光子晶体光纤（微结构光纤，PCF）具有无截止单模特性 、大模场尺寸 /小模场尺寸和 色散可调特性等特性。广泛应用于色散控制 (色散平坦，零色散位移可以到800nm)，非线性光学 （高非线性，超连续谱产生），多芯光纤 ，有源光纤器件（双包层PCF有效束缚泵浦光）和光纤传感等领域。 空隙带隙型光子晶体光纤（微结构光纤，PCF） 具有易耦合，无菲涅尔反射，低弯曲损耗、低非线性和特殊波导色散等特点被广泛应用于高功率导光，光纤传感和气体光纤等方面。光子晶体光纤的发展为光纤传感 开拓了广阔的空间，尤其是在生物传感和气体传感方面为光纤传感技术带来新的发展。昊量光电提供各种光子晶体光纤及光子晶体光纤的定制化服务， 昊量可以提供的产品及服务：材料：石英或硫化物提供各种定制服务可提供各种套管，接头及相应光线器件各种解决方案设计及模拟 主要产品： 1，基于石英的各种有源及无源光纤： 保偏型光子晶体光纤，定制色散型光子晶体光纤，光子晶体光纤预制棒空气包层、双包层光子晶体光纤，LMA空心光纤，光子带隙光纤掺杂光子晶体光纤多心光子晶体光纤 2，基于硫化物的光子晶体光纤超高非线性光纤（50,000/W*km）中红外光子晶体光纤定制化服务 3,各种解决方案基础研究传感激光器光谱学 主要应用：高功率低损耗近红外激光传输脉冲整形脉冲压缩非线性光学光纤传感超连续激光产生可调谐光纤耦合器多波长激光器光纤耦合 指标参数： 常规产品： 相关产品 覆盖紫外波段超连续激光器(320~1750nm) FROG 超短脉冲测量仪 啁啾布拉格光栅

二硫化钛晶体 TiS2(Tantalum Sulfide) 晶体结构：六边形晶体尺寸:~10毫米电学性能：半金属，逆磁性晶体结构：六边形晶胞参数：a = b = 0.340 nm, c = 0.570 nm, α = β = 90°, γ = 120°晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a TiS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4Stoichiometric analysis of a single crystal TiS2 by Energy-dispersive X-ray spectroscopy (EDX).Powder X-ray diffraction (XRD) of a single crystal TiS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.Raman spectrum of a single crystal TiS2. Measurement was performed with a 785 nm Raman system at room temperature.

二硫化钼晶体（天然） MoS2(Molybdenum Disulfide)晶体结构：六边形类型：天然晶体尺寸：~10mm-20mm纯度：99% 属性：半导体

二硫化铅锡晶体 PbSnS2(Lead Tin Disulfide)晶体结构：六边形类型：天然晶体尺寸：~8mm纯度：99.995%属性：半导体

二硫化钨晶体 2H-WS2(Tungsten Disulfide)晶体结构：六边形晶体尺寸：~10毫米电学性能：N型半导体晶体结构：六边形晶胞参数：a = b = 0.315 nm, c = 1.227 nm, α = β = 90, γ = 120°晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10Stoichiometric analysis of a single crystal 2H-WS2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal 2H-WS2. Measurement was performed with a 785 nm Raman system at room temperature.Powder X-ray diffraction (XRD) of a single crystal 2H-WS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

晶体尺寸：10毫米电学性能：半导体晶体结构：斜方晶系晶胞参数：a = 0.4025nm，B = 1.117nm，C = 1.135nm，α=β=γ= 9晶体类型：合成晶体纯度：＞99.995%表征方法：XRD，拉曼，EDX，霍尔测量EDX of a single crystal Bi2S3.XRD of a single crystal Bi2S3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.Raman of a single crystal Bi2S3. Measurement with a 785nm Raman at room temperature.

碲化铋晶体 Bi2Te3(Bismuth Telluride) 晶体结构：六边形晶体尺寸：~10毫米电气性能：拓扑绝缘体的晶体结构：六边形晶胞参数：a = b = 0.438 nm, c = 3.050 nm, α = β = 90°, γ = 120°晶体类型：合成晶体纯度：＞99.995% XRD of a single crystal Bi2Te3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.EDX of a single crystal Bi2Te3.

二硫化铅锡晶体 PbSnS2(Lead Tin Disulfide)晶体结构：六边形类型：天然晶体尺寸：~8mm纯度：99.995% 属性：半导体

二硫化铼晶体 ReS2 (Rhenium Disulfide)晶体结构：三斜晶晶体尺寸：~8毫米电学性能：N型半导体晶体结构：三斜晶系晶胞参数：a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97° 晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a ReS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8Stoichiometric analysis of a single crystal ReS2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal ReS2. Measurement was performed with a 785 nm Raman system at room temperature.Powder X-ray diffraction (XRD) of a single crystal ReS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

二硫化铌晶体 2H-NbS2(Niobium Disulfide)晶体尺寸：2毫米电学性能：金属，superconductor (Tc~6K), charge density waves (CDW) system.晶体结构：六边形晶胞参数：a = b = 0.332 nm, c = 1.197 nm, α = β = 90, γ = 120°晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a single crystal 2H-NbS2 aligned along the (001) plane. XRD diffraction was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8Powder X-ray diffraction (XRD) of a single crystal 2H-NbS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

硫硒化钼晶体 MoSSe(Molybdenum Sulfide Diselenide) 晶体尺寸：~6毫米电学性能：半导体晶体结构：六边形晶胞参数：取决于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.29 nm, α = β = 90°, γ = 120°晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a MoSSe single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10Powder X-ray diffraction (XRD) of a single crystal MoSSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.Stoichiometric analysis of a single crystal MoSSe by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal MoSSe. Measurement was performed with a 785 nm Raman system at room temperature.

Nd:YAP晶体,掺钕铝酸钇晶体由孚光精仪进口,孚光精仪公司是中国进口激光器件的第一品牌, 最大的进口精密光学器件和仪器供应商！提供的Nd:YAP晶体,掺钕铝酸钇晶体系高质量原装进口晶体, 在国外生长, 切割,抛光,高质量的镀膜，并进行严格的质量控制后进口到国内，质量非常可靠，在中科院上海光机所，安徽光机所，中国工程物理研究院等单位成功使用。我们提供的Nd:YAP晶体,掺钕铝酸钇晶体采用Czochralski法生长而成，在Nd:YAP晶体生长过程中使用了保护性的大气，精确控制退火，保证了Nd:YAP晶体,掺钕铝酸钇晶体良好的激光产生效率。I)Nd:YAP晶体棒标准产品为0.7 at.％ Nd:YAP（连续激光）和0.9 at.％ Nd/Y（脉冲激光），都是b定向产品，可根据用户要求提供其他掺杂浓度的产品；II）掺钕铝酸钇晶体在1079nm的斜效率与Nd：YAG在1064nm的类似；III) Nd:YAP晶体b轴定向切割适合多种应用； IV) Nd:YAP晶体,掺钕铝酸钇晶体线性极化，无热双折射问题，易于产生1.3微米激光。Nd：YAG晶体和Nd：YAP晶体比较 晶体名称Nd:YAP晶体Nd:YAG晶体介质主体YAlO3Y3Al5O12掺杂离子NdNd晶体结构正交，斜方晶系立方晶胞体积a0=0.518nm b0=0.531nm c0=0.736nmak=1.201nm折射率（1064nm) a:1.914 b:1.925 c:1.940 1.816热导率0.11W/cm K0.11W/cm K密度5.35g/cm3 4.56g/cm3莫氏硬度8.58.25荧光寿命（1％Nd）170微秒235微秒激光波长930nm 1079nm 1340nm946nm 1064nm 1319nm我们提供的Nd:YAP晶体,掺钕铝酸钇晶体采用Czochralski法生长而成，在Nd:YAP晶体生长过程中使用了保护性的大气，精确控制退火，保证了Nd:YAP晶体,掺钕铝酸钇晶体良好的激光产生效率。领先的进口精密激光光学器件旗舰型服务商--孚光精仪！

磷化镓晶体GaP晶体太赫兹晶体产品简介 磷化镓是一种人工合成的化合物半导体材料。外观：橙红色透明晶体。磷化镓是一种由n从族元素镓(Ga)与vA族元素磷(P)人工合成的m- V族化合物半导体材料。磷化镓的晶体结构为闪锌矿型，晶格常数5.447±0.06埃，化学键是以共价键为主的混合键，其离子键成分约为20%，300K时能隙为2.26eV，属间接跃迁型半导体。磷化镓与其他大带隙Ⅲ-Ⅴ族化合物半导体(如GaAS、 InP)相同，可通过引入深中心使费米能级接近带隙中部，如掺入铬、铁、氧等杂质元素可成为半绝缘材料。目前尚未得到非掺杂半绝缘材料。 （110）晶向的GaP晶体常常被用在太赫兹时域光谱仪中作为探测晶体，其横光学支声子线在11THz。通常可探测的频谱宽度在0.1-6.5THz。 中文名：磷化镓外文名：Gallium phosphide分子式：GaP分子量：100.6968实验结果图为40fs钛蓝宝石激光泵浦宽谱光电导天线，400um厚GaP晶体探测的结果GaP磷化镓晶体产品GaP 磷化镓晶体基本规格(a) Description 1 GaP (110), 10x10x4 mm, 2 sides polished. 2 GaP (110), 10x10x2 mm, 2 sides polished.. 3GaP (110), 10x10x0.5 mm, 2 sides polished.. 4GaP (110), 10x10x0.4 mm, 2 sides polished.. 5 GaP (110), 10x10x0.2 mm, 2 sides polished.. 6GaP (110), 10x10x0.1 mm, 2 sides polished..(a)其他规格要求可以定制

二硫化钼晶体（天然） MoS2(Molybdenum Disulfide)晶体结构：六边形类型：天然晶体尺寸：~10mm-20mm纯度：99%属性：半导体

硫盐矿物晶体 Pb3Sn4FeSb2S14(Lead Tin Ferrum Antimony Sulfide)晶体结构：六边形类型：合成尺寸：~8mm纯度：99.995%属性：超导体

硫盐矿物晶体 Pb3Sn4FeSb2S14(Lead Tin Ferrum Antimony Sulfide)晶体结构：六边形类型：合成尺寸：~8mm纯度：99.995%属性：超导体

二硫化钛晶体 TiS2(Tantalum Sulfide) 晶体结构：六边形晶体尺寸:~10毫米电学性能：半金属，逆磁性晶体结构：六边形晶胞参数：a = b = 0.340 nm, c = 0.570 nm, α = β = 90°, γ = 120°晶体类型：合成晶体纯度：＞99.995% X-ray diffraction on a TiS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4Powder X-ray diffraction (XRD) of a single crystal TiS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker. Stoichiometric analysis of a single crystal TiS2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal TiS2. Measurement was performed with a 785 nm Raman system at room temperature.

二硫化钨钼晶体 MoWS2(Molybdenum Tungsten Disulfide alloy)晶体尺寸：~6毫米电学性能：半导体晶体结构：六边形晶胞参数：取决于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.29 nm, α = β = 90°, γ =120°晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a MoWS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10 Powder X-ray diffraction (XRD) of a single crystal MoWS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.Stoichiometric analysis of a single crystal MoWS2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal MoWS2. Measurement was performed with a 785 nm Raman systemat room temperature.

二硫化铼晶体 ReS2 (Rhenium Disulfide)晶体结构：三斜晶晶体尺寸：~8毫米电学性能：N型半导体晶体结构：三斜晶系晶胞参数：a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97°晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a ReS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8 Powder X-ray diffraction (XRD) of a single crystal ReS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker. Stoichiometric analysis of a single crystal ReS2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal ReS2. Measurement was performed with a 785 nm Raman system at room temperature.

二硫化钨晶体 2H-WS2(Tungsten Disulfide)晶体结构：六边形晶体尺寸：~10毫米电学性能：N型半导体晶体结构：六边形晶胞参数：a = b = 0.315 nm, c = 1.227 nm, α = β = 90, γ = 120°晶体类型：合成晶体纯度：＞99.995% X-ray diffraction on a single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10Powder X-ray diffraction (XRD) of a single crystal 2H-WS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker. Stoichiometric analysis of a single crystal 2H-WS2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal 2H-WS2. Measurement was performed with a 785 nm Raman system at room temperature.

二硒化钨晶体 WSe2(Tungsten Diselenide)-P型晶体尺寸：~10毫米电学性能：半导体，P型晶体结构：六边形晶胞参数：a = b = 0.328 nm, c = 1.298 nm, α = β = 90°, γ = 120°晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a WSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10Powder X-ray diffraction (XRD) of a single crystal WSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.Stoichiometric analysis of a single crystal WSe2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal WSe2. Measurement was performed with a 785 nm Raman system at room temperature.

二硒化铂晶体 PtSe2 (Platinum Selenide)晶体尺寸：2-3毫米电学性能：半金属晶体结构：六边形晶胞参数：a = b = 0.375 nm, c = 0.506 nm, α = β = 90°, γ = 120°晶体类型：合成晶体纯度：＞99.995% Powder X-ray diffraction (XRD) of a single crystal PtSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.Stoichiometric analysis of a single crystal PtSe2 by Energy-dispersive X-ray spectroscopy (EDX). Raman spectrum of a single crystal PtSe2. Measurement was performed with a 785 nm Raman system at room temperature.

二碲化铂晶体 PtTe2(Platina Ditelluride)晶体尺寸：2~3毫米电学性能：金属，顺磁性晶体结构：六边形晶胞参数：a = b = 0.4000 nm, c = 0.5192 nm, α = β = 90°, γ = 120°晶体类型：合成晶体纯度：＞99.995%Powder X-ray diffraction (XRD) of a single crystal PtTe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker. Stoichiometric analysis of a single crystal PtTe2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal PtTe2. Measurement was performed with a 785 nm Raman system at room temperature.

二硫化钽晶体(1T) TaS2(Tantalum Sulfide) -1T晶体尺寸：~8毫米电学性能：半导体，电荷密度波（CDW），Mott相晶体结构：六边形晶胞参数：a = b = 0.336 nm, c = 0.590 nm, α = β = 90°, γ = 120° 晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a Tantalum Disulfide single crystal aligned along the (001) plane. XRD on the 1T-TaS2 was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5Stoichiometric analysis of a single crystal 1T-TaS2 by Energy-dispersive X-ray spectroscopy (EDX).Powder X-ray diffraction (XRD) of a single crystal 1T-TaS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

光折变晶体SBN,BSO,BGO,Fe:LNB晶体光折变晶体：SBN锶钡铌酸盐晶体/BSO硅酸铋晶体/BGO锗酸铋晶体/Fe:LNB掺铁铌酸锂晶体 光折变效应是局部折射率通过光强度的空间变化而改变的现象。当形成空间变化的照明图案的光折射材料中，相干光彼此干涉时，可强烈观察到。这是由于漂移或扩散和空间电荷分离效应，在迁移材料中产生电荷载流子。产生的所产生的电场通过电光效应引起折射率变化。其中一些应用是空间光调制器，4波混频，相位共轭，光存储器和计算。 Sillenite单晶Bi12SiO20（BSO）和Bi12GeO20（BGO）显示了不同物理性质的独特组合。BSO和BGO晶体是非常有效的光电导体，具有低暗电导率，允许建立大的光诱导空间电荷。光电导性和光电特性的强烈光谱依赖性允许开发和生产各种各样的光学器件和系统。BSO和BGO晶体用于空间光调制器，动态实时全息记录设备，相位共轭波混合，光学相关器和光学激光系统，用于超短光脉冲的自适应校正。光诱导吸收使其有可能开发和生产“光 - 光”型光学器件，如光学调制器，开关等。 通过不同技术制造氧化亚锡薄膜晶体结构允许开发包括光学波导，集成光学器件的多种装置。基于Sillenites的波导光学结构的使用允许在宽光谱范围内实现均匀照射（通常到波导平面）。 BGO SBN Sillenite Oxides的相对较大的电光和法拉第效应使其可用于光纤电/磁场传感器。我们能够少量提供未掺杂的BSO和BGO晶体用于科学研究，并大量用于工业目的。随着2x2x2 - 25x25x25 mm3晶体，我们还提供带有ITO（氧化铟锡）涂层的孔径高达30x30 mm2，厚度为0.5 - 5 mm的晶体板。 锶钡铌酸盐（SrxBa（1-x）Nb2O6）SBN是一种优异的光学和光折变材料。名义上纯，由Ce，Cr，Co，Fe掺杂。不同组成的SBN晶体用于电光学，声光学和光折变非线性光学器件。一种新的生长技术提供了优异的光学质量单晶，没有生长条纹，夹杂物和其他不均匀性，以及高达80mm的确定横截面和线性尺寸。SBN晶体元件满足不同应用的要求。基于这种独特的晶体生长技术，可以使用大量高质量的SBN光学元件和光折变单元，Fe：LiNbO3（其他掺杂剂可用）。 铁掺杂铌酸锂晶体（Fe：LiNbO3）是一种常用的具有高电光（EO）系数，高光折变灵敏度和衍射效率的光折变材料。与BaTiO3系列光折变晶体相比，它具有易于操作和存储，成本低，尺寸利用率大等突出优点，使其更适用于批量制造和实用设备。因此，Fe：LiNbO3晶体将预测广泛的应用。MolTech提供具有不同Fe掺杂浓度，尺寸和光学处理要求的晶体。 光折变晶体：SBN锶钡铌酸盐晶体/BSO硅酸铋晶体/BGO锗酸铋晶体/Fe:LNB掺铁铌酸锂晶体晶体Bi 12 SiO 20（BSO） Bi 12 GeO 20（BGO）Fe：LiNbO 3SBN x = 0.60SBN x = 0.75晶体结构立方，点组：23立方，点组：23 三角形，3m4mm4mm晶格（胞）参数，?10.10 10.15-a = 12.46，c = 3.946a = 12.43024，c = 3.91341透射范围，μm0.4-60.4-7 0.35 - 5.50.3 5 - 6.00.35 - 6.0折射率在0.63μm2.542.552.20（ne），2.29（no）n e = 2.33，n o = 2.36 @0.51μmn e = 2.35，n o = 2.37 @0.51μm电光系数r41，pm / V53.5r22 = 6.8，r31 = 10，r33 = 32r 13 = 47，r 33 = 235r 13 = 67，r 33 = 1340光学活性，500纳米处的deg / mm4241.5---在600nm处为 - deg / mm2524---密度，g / cm 39.159.24.645.45.4莫氏硬度5555.55.5熔点，C8909201255（Tc = 1140）1500±10°C1500±10°C介电常数564085（e11）30（e33） 8803400暗电阻，欧姆厘米10 1410 14-- -吸收系数@0.44μm--- 0.3cm -1- 在25°C时的热导率---0.006 W / cm * K@ 1370至1470℃下---- 0.008 W / cm * K热光系数dn e / dT---3×10 -4 K -1-居里温度---75℃56℃半波电压---240伏48 V我们可提供棒或薄片，由具有不同横截面和尺寸的薄膜光折射晶体制成。不同浓度的不同掺杂剂可满足特定客户的要求。光折变晶体：SBN锶钡铌酸盐晶体/BSO硅酸铋晶体/BGO锗酸铋晶体/Fe:LNB掺铁铌酸锂晶体

二硫化钨钼晶体 MoWS2(Molybdenum Tungsten Disulfide alloy)晶体尺寸：~6毫米电学性能：半导体晶体结构：六边形晶胞参数：取决于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.29 nm, α = β = 90°, γ =120° 晶体类型：合成晶体纯度：＞99.995%X-ray diffraction on a MoWS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10Stoichiometric analysis of a single crystal MoWS2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal MoWS2. Measurement was performed with a 785 nm Raman system at room temperature.Powder X-ray diffraction (XRD) of a single crystal MoWS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

硒化钨钼晶体 MoWSe2(Molybdenum Tungsten Diselenide)晶体尺寸：6毫米电学性能：半导体晶体结构：六边形晶胞参数：取决于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.30 nm, α = β = 90°, γ = 120°晶体类型：合成晶体纯度：＞99.995% X-ray diffraction on a MoWSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10Powder X-ray diffraction (XRD) of a single crystal MoWSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker. Stoichiometric analysis of a single crystal MoWSe2 by Energy-dispersive X-ray spectroscopy (EDX).Raman spectrum of a single crystal MoWSe2. Measurement was performed with a 785 nm Raman system at room temperature.

光折变晶体：BSO硅酸铋晶体光折变晶体：SBN锶钡铌酸盐晶体/BSO硅酸铋晶体/BGO锗酸铋晶体/Fe:LNB掺铁铌酸锂晶体 光折变效应是局部折射率通过光强度的空间变化而改变的现象。当形成空间变化的照明图案的光折射材料中，相干光彼此干涉时，可强烈观察到。这是由于漂移或扩散和空间电荷分离效应，在迁移材料中产生电荷载流子。产生的所产生的电场通过电光效应引起折射率变化。其中一些应用是空间光调制器，4波混频，相位共轭，光存储器和计算。 Sillenite单晶Bi12SiO20（BSO）和Bi12GeO20（BGO）显示了不同物理性质的独特组合。BSO和BGO晶体是非常有效的光电导体，具有低暗电导率，允许建立大的光诱导空间电荷。光电导性和光电特性的强烈光谱依赖性允许开发和生产各种各样的光学器件和系统。BSO和BGO晶体用于空间光调制器，动态实时全息记录设备，相位共轭波混合，光学相关器和光学激光系统，用于超短光脉冲的自适应校正。光诱导吸收使其有可能开发和生产“光 - 光”型光学器件，如光学调制器，开关等。 通过不同技术制造氧化亚锡薄膜晶体结构允许开发包括光学波导，集成光学器件的多种装置。基于Sillenites的波导光学结构的使用允许在宽光谱范围内实现均匀照射（通常到波导平面）。 BGO SBN光折变晶体：SBN锶钡铌酸盐晶体/BSO硅酸铋晶体/BGO锗酸铋晶体/Fe:LNB掺铁铌酸锂晶体Bi 12 SiO 20（BSO）Bi 12 GeO 20（BGO）Fe：LiNbO 3SBN x = 0.60SBN x = 0.75晶体结构立方，点组：23立方，点组：23三角形，3m 4mm4mm晶格（胞）参数，?10.1010.15 -a = 12.46，c = 3.946a = 12.43024，c = 3.91341透射范围，μm0.4-60.4-7 0.35 - 5.50.3 5 - 6.00.35 - 6.0 晶体 折射率在0.63μm2.542.552.20（ne），2.29（no）n e = 2.33，n o = 2.36 @0.51μmn e = 2.35，n o = 2.37 @0.51μm电光系数r41，pm / V53.5r22 = 6.8，r31 = 10，r33 = 32r 13 = 47，r 33 = 235r 13 = 67，r 33 = 1340光学活性，500纳米处的deg / mm4241.5 ---在600nm处为 - deg / mm25 24---密度，g / cm 39.159.24.645.4 5.4莫氏硬度5555.55.5熔点，C890 9201255（Tc = 1140）1500±10°C1500±10°C介电常数 564085（e11）30（e33）8803400 暗电阻，欧姆厘米10 1410 14 -- -吸收系数@0.44μm- -- 0.3cm -1- 在25°C时的热导率---0.006 W / cm * K@ 1370至1470℃下--- -0.008 W / cm * K热光系数dn e / dT- --3×10 -4 K -1 -居里温度--- 75℃56℃半波电压-- -240伏48 V我们可提供棒或薄片，由具有不同横截面和尺寸的薄膜光折射晶体制成。不同浓度的不同掺杂剂可满足特定客户的要求。BSO硅酸铋晶体

产品名称：三氧化二铝(Al2O3)晶体基片产品简介：Al2O3单晶（Sapphire,又称白宝石，蓝宝石）有着很好的热特性，极好的电气特性和介电特性，并且防化学腐蚀，它耐高温，导热好，硬度高，透红外，化学稳定性好。广泛用于耐高温红外窗口材料和III-V族氮化物及多种外延薄膜基片材料，为满足日益增长的蓝、紫、白光发光二极管（LED）和蓝光激光器（LD）的需要，科晶公司专业生产高质量的蓝宝石晶体和外延抛光基片，将为您提供大量高质量低价格的单晶和基片。 技术参数： 晶体结构六方 a =4.758 ? c= 12.992 ?结晶方向(11-20 ) - a plane: 2.379 ? (1-102) - r plane: 1.740 ?(10-10) - m plane: 1.375 ? (0001) - c plane: 2.165 ? 单晶纯度 99.99% 熔点2040 oC 密度3.98 g/cm3 硬度9 ( mohs)热膨胀7.5 (x10-6/ oC) 热容0.10( cal / oC) 热导46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )介电常数~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis正切损耗 2x10-5 at A axis , 5 x10-5 at C axis产品规格： C, A, M, R 公差：±0.5度dia3"x0.5mm, dia2"x0.5mm, 10x10x0.5mm, 10x5x0.5mm单抛或双抛，Ra5A 注：可按客户需求定制相应的方向和尺寸。标准包装：1000级超净室，100级超净袋或单片盒封装

硫化锗晶体 GeS(Germanium Sulfide)晶体尺寸：~10毫米电学性能：半导体晶体结构：斜方晶系晶胞参数：a = 1.450, b = 0.364 nm, c = 0.430 nm, α = β = γ = 90°晶体类型：合成晶体纯度：＞99.995% X-ray diffraction on a single crystal GeS aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8Powder X-ray diffraction (XRD) of a single crystal GeS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker. Stoichiometric analysis of a single crystal GeS by Energy-dispersive X-ray spectroscopy (EDX). Raman spectrum of a single crystal GeS. Measurement was performed with a 785 nm Raman system at room temperature.