半导体硅片检测标准汇总 涉气相色谱、二次离子质谱等多类仪器
p span 硅基半导体材料是目前产量最大、应用最广的半导体材料,90%以上的半导体产品都离不开硅片。 /span span 硅片行业是资金和技术密集型行业,垄断度极高,目前前四厂商市场占有率占比超过80%,分别是 /span span 日本信越、日本SUMCO、台湾环球晶圆、德国世创。 /span /p p 硅元素是地壳中储量最丰富的元素之一,以二氧化硅和硅酸盐的形式大量存在于沙子、岩石、矿物中。硅从原料转变为半导体硅片要经过复杂的过程:首先硅原料和碳源在高温下获得纯度约98%的冶金级硅,再经氯化、蒸馏和化学还原生成纯度高达99.999999999%的电子级多晶硅。半导体材料的电学特性对杂质浓度非常敏感,而硅自身的导电性不佳,常通过掺杂硼、磷、砷和锑来精确控制其电阻率。一般,将掺杂后的多晶硅加热至熔点,然后用确定晶向的单晶硅接触其表面,以直拉生长法生长出硅锭,硅锭经过金刚石切割、研磨、刻蚀、清洗、倒角、抛光等工艺,即加工成为半导体硅片。根据制造工艺分类,半导体硅片主要可以分为抛光片、外延片、SOI 硅片等。根据半导体尺寸分类,半导体硅片的尺寸(直径)主要有 50mm(2 英寸)、75mm(3 英寸)、100mm(4 英寸)、150mm(6 英寸)、200mm(8 英寸)、 300mm(12英寸)等规格。目前硅片生产以8英寸和12英寸为主,其中8英寸硅片主要应用于电子、通信、计算、工业、汽车等领域,而12英寸硅片多用于PC、平板、手机等领域。 /p p 在生产环节中,半导体硅片需要尽可能地减少晶体缺陷,保持极高的平整度与表面洁净度,以保证集成电路或半导体器件的可靠性。硅片检测要检查直径、厚度、弯曲、翘曲、缺陷、晶面、表面污染(有机物)、电阻率、晶面取向、氧碳含量、表面平整度和粗糙度、微量元素含量、反射率等。使用到的仪器有测厚仪、显微镜、XRD、气相色谱、X射线荧光光谱、二次离子质谱、电阻率测试仪等。 /p p style=" text-align: center " strong 硅片测试国家标准 /strong /p table border=" 1" cellspacing=" 0" cellpadding=" 0" style=" border-collapse:collapse border:none" align=" center" tbody tr style=" height:18px" class=" firstRow" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p strong span style=" font-family:宋体" 标准编号 /span /strong /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p strong span style=" font-family:宋体" 标准名称 /span /strong /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T11073-2007 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片径向电阻率变化的测量方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T13388-2009 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片参考面结晶学取向 /span span X /span span style=" font-family:宋体" 射线测试方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T14140-2009 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片直径测量方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T19444-2004 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片氧沉淀特性的测定 /span span - /span span style=" font-family:宋体" 间隙氧含量减少法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T19922-2005 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片局部平整度非接触式标准测试方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T24577-2009 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 热解吸气相色谱法测定硅片表面的有机污染物 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T24578-2015 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片表面金属沾污的全反射 /span span X /span span style=" font-family:宋体" 光荧光光谱测试方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T26067-2010 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片切口尺寸测试方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T26068-2018 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片和硅锭载流子复合寿命的测试非接触微波反射光电导衰减法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T29055-2019 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 太阳能电池用多晶硅片 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T29505-2013 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片平坦表面的表面粗糙度测量方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T30701-2014 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 表面化学分析硅片工作标准样品表面元素的化学收集方法和全反射 /span span X /span span style=" font-family:宋体" 射线荧光光谱法 /span span (TXRF) /span span style=" font-family:宋体" 测定 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T30859-2014 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 太阳能电池用硅片翘曲度和波纹度测试方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T30860-2014 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 太阳能电池用硅片表面粗糙度及切割线痕测试方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T30869-2014 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 太阳能电池用硅片厚度及总厚度变化测试方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T32280-2015 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片翘曲度测试自动非接触扫描法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T32281-2015 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 太阳能级硅片和硅料中氧、碳、硼和磷量的测定二次离子质谱法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T32814-2016 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅基 /span span MEMS /span span style=" font-family:宋体" 制造技术基于 /span span SOI /span span style=" font-family:宋体" 硅片的 /span span MEMS /span span style=" font-family:宋体" 工艺规范 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T37051-2018 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 太阳能级多晶硅锭、硅片晶体缺陷密度测定方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T6616-2009 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 半导体硅片电阻率及硅薄膜薄层电阻测试方法非接触涡流法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T6617-2009 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片电阻率测定扩展电阻探针法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T6618-2009 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片厚度和总厚度变化测试方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T6619-2009 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片弯曲度测试方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T6620-2009 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片翘曲度非接触式测试方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T6621-2009 /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片表面平整度测试方法 /span /p /td /tr tr style=" height:18px" td width=" 112" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span GB/T29507-2013& nbsp & nbsp /span /p /td td width=" 456" nowrap=" " valign=" middle" style=" border: 1px solid rgb(0, 0, 0) padding: 5px " height=" 18" align=" center" p span style=" font-family:宋体" 硅片平整度、厚度及总厚度变化测试自动非接触扫描法 /span /p /td /tr /tbody /table p 据 Gartner 预计,2017-2022 年半导体增速最快的应用领域是工业电子和汽车电子;预计2020年半导体发货总量将超过一万亿,其中增长率最高的半导体细分领域包括智能手机、汽车电子以及人工智能等。 /p p 需要相关标准,请到 a href=" https://www.instrument.com.cn/download/L_5DBC98DCC983A70728BD082D1A47546E.htm" target=" _self" 仪器信息网资料中心 /a 查找。 /p