硒化铟晶体(99.995%) In2Se3(Indium Selenide)
硒化铟晶体 In2Se3(Indium Selenide)晶体尺寸:8-10毫米电学性能:半导体晶体结构:六边形晶胞参数:a = b = 0.398 nm, c = 18.89 nm, α = β = 90°, γ = 120°晶体类型:合成晶体纯度:>99.995% X-ray diffraction on a 2H-In2Se3 (Indium Selenide) single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 8 XRD peaks correspond, from left to right, to (00l) with l = 4, 6, 8, 10, 12, 14, 16, 18Powder X-ray diffraction (XRD) of a single crystal In2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker. Stoichiometric analysis of a single crystal In2Se3 by Energy-dispersive X-ray spectroscopy (EDX).