雪崩二极管

Series-11 Optimized for 360-560nm

Blue enhanced for analytical instruments, readout for scintillators.

Series-12 Optimized for 500-750nm

Flat frequency response up to 3GHz for precise distance meas., communication.

Series-8 Optimized for 750-820nm

High-speed for resistance meas., laser scanner, high speed applications.

Series-9 Optimized for 750-930nm

Low rise time for laser rangefinder, LIDAR, basic technology for arrays.

Series-10 Optimized for 860-1100nm

Sensitivity at 1064nm for range finder, laser tracker, LIDAR.

Type No.

Active area

Dark current

Rise time

Chip

Package

Size

Area

M=100

410nm 50Ω

mm

mm2

nA

ns

AD800-11

TO52S1

?0.8

0.5

1

1

AD1900-11

TO5i

?1.95

3

5

2

Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz)

Type No.

Active area

Spectral Responsivity

Cut-off frequency

Chip

Package

Size

Area

660nm M=100

660nm 50Ω

mm

mm2

A/W

GHz

AD100-12

LCC6.1

?0.1

0.008

50

typ. 3, min. 2

AD100-12

LCC6.1f

?0.1

0.008

44

typ. 3, min. 2

AD100-12

TO52S1

?0.1

0.008

50

typ. 3, min. 2

AD230-12

LCC6.1

?0.23

0.042

50

typ. 3, min. 2

AD230-12

LCC6.1f

?0.23

0.042

44

typ. 3, min. 2

AD230-12

TO52S1

?0.23

0.042

50

typ. 3, min. 2

AD500-12

LCC6.1

?0.5

0.196

50

typ. 3, min. 2

AD500-12

LCC6.1f

?0.5

0.196

44

typ. 3, min. 2

AD500-12

TO52S1

?0.5

0.196

50

typ. 3, min. 2

Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds)

Type No.

Active area

Dark current

Rise time

Chip

Package

Size

Area

M=100

M=100 20V 50Ω

mm

mm2

nA

ns

AD100-8

LCC6.1

?0.1

0.008

0.05

<0.18

AD100-8

LCC6.1f

?0.1

0.008

0.05

<0.18

AD100-8

TO52S1

?0.1

0.008

0.05

<0.18

AD100-8

TO52S3

?0.1

0.008

0.05

<0.18

AD230-8

LCC6.1

?0.23

0.04

0.3

0.18

AD230-8

LCC6.1f

?0.23

0.04

0.3

0.18

AD230-8

TO52S1

?0.23

0.04

0.3

0.18

AD230-8

TO52S3

?0.23

0.04

0.3

0.18

AD500-8

LCC6.1

?0.5

0.2

0.5

0.35

AD500-8

LCC6.1f

?0.5

0.2

0.5

0.35

AD500-8

TO52S1

?0.5

0.2

0.5

0.35

AD500-8

TO52S2

?0.5

0.2

0.5

0.35

AD500-8

TO52S3

?0.5

0.2

0.5

0.35

AD800-8

TO52S1

?0.8

0.5

2

0.7

AD1100-8

TO52S1

?1.13

1

4-6

1

AD1900-8

TO5i

?1.95

3

15

1.4

AD3000-8

TO5i

?3

7.07

30

2

AD5000-8

TO8i

?5

19.63

60

3

AD230-8-2.3G

TO5

AD230-8-2.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.

AD500-8-1.3G

TO5

AD500-8-1.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.

Series 9: NIR sensitivity enhanced-900nm (specifically for LIDAR and laser rangefinders)

Type No.

Active area

Dark current

Rise time

Chip

Package

Size

Area

M=100

M=100

mm

mm2

nA

ns

AD230-9

LCC6.1

?0.23

0.04

0.5

0.5

AD230-9

LCC6.1f

?0.23

0.04

0.5

0.5

AD230-9

TO52S1

?0.23

0.04

0.5

0.5

AD230-9

TO52S1F2

?0.23

0.04

0.5

0.5

AD230-9

TO52S3

?0.23

0.04

0.5

0.5

AD500-9

LCC6.1

?0.5

0.2

0.8

0.55

AD500-9

LCC6.1f

?0.5

0.2

0.8

0.55

AD500-9

TO52S1

?0.5

0.2

0.8

0.55

AD500-9

TO52S1F2

?0.5

0.2

0.8

0.55

AD500-9

TO52S2

?0.5

0.2

0.8

0.55

AD500-9

TO52S3

?0.5

0.2

0.8

0.55

AD800-9

TO52S1

?0.8

0.5

2

0.9

AD1100-9

TO52S1

?1.13

1

4

1.3

AD1500-9

TO5i

?1.5

1.77

2

2

AD3000-9

TO5i

?3

7.07

30

2

AD5000-9

TO8i

?5

19.63

60

3

AD230-9-400M

TO5

AD230-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.

AD500-9-400M

TO5

AD500-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.

Multi-Element Array

8AA0.4-9

SOJ22GL

APD Array 8 Elements, QE>80% at 760-910nm with NTC

16AA0.13-9

SOJ22GL

APD Array 16 Elements, QE>80% at 760-910nm with NTC

16AA0.13-9

DIL18

APD Array 16 Elements, QE>80% at 760-910nm

16AA0.4-9

SOJ22GL

APD Array 16 Elements, QE>80% at 760-910nm

25AA0.04-9

BGA

APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC

25AA0.16-9

BGA

APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC

64AA0.04-9

BGA

APD Array 64 (8×8) elements, QE>80% at 760-910nm with PTC

Series 10: NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources)

Type No.

Active area

Dark current

Rise time

Chip

Package

Size

Area

M=100

M=100 1064nm 50Ω

mm

mm2

nA

ns

AD500-10

TO5i

?0.5

0.2

1.5

4

AD800-10

TO5i

?0.8

0.5

3

5

AD1500-10

TO5i

?1.5

1.77

7

5

AD4000-10

TO8Si

?4

12.56

50

6

AD800-10

TO8Si

High speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA)

Multi-Element Array

QA4000-10

TO8Si

Quadrant Avalanche Photodiode, High QE at 850-1070nm