The only commercially available TlGaTe2 vdW crystals have been synthesized at our facilities through float zone technique. TlGaTe2 semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX2 (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe2, TlGaS2, TlInS2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. Stacking of the atoms in TlGaSe2, TlGaS2 and TlInS2 layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. Recently, low-temperature rhombohedral ordered
phase of Tl-based III–V–VI2 ternary chalcogenides has been predicted to be topologically nontrivial and a terminated surface with a single Dirac cone has been identified through first-principles calculations (Phys. Rev. Lett. 105, 036404). TlGaTe2 crystals exhibit anisotropic structural, electronic, and optical properties with the band gap of 1.2 eV.
Properties of TlGaTe2 layered crystals by 2Dsemiconductors USA
企业名称
上海巨纳科技有限公司
企业信息已认证
企业类型
信用代码
310109000501433
成立日期
2009-04-01
注册资本
1000
经营范围
通信设备、光电源、生物科技专业领域内的技术开发、技术转让、技术咨询、技术服务;销售仪器仪表,电子元器件,机械设备及配件,通信设备及相关产品(除卫星地面接收装置),日用百货,从事货物及技术的进出口业务。【企业经营涉及行政许可的,凭许可证件经营】
上海巨纳科技有限公司
公司地址
上海市虹口区宝山路778号海伦国际大厦5楼
客服电话