This product contains full area coverage SnSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick SnSe2 sheet. Synthesized full area coverage monolayer SnSe2 is highly crystalline, some regions also display significant crystalline anisotropy.
Sample Properties.
Sample size | 1cm x 1cm square shaped |
Substrate type | Sapphire c-cut (0001) |
Coverage | Full monolayer coverage |
Electrical properties | 1.5 eV Indirect Gap Semiconductor |
Crystal structure | Hexagonal Phase |
Unit cell parameters | a = b = 0.380, c = 0.612 nm, α = β = 90°, γ = 120° |
Production method | Low Pressure Chemical Vapor Deposition (LPCVD) |
Characterization methods | Raman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS |
Specifications
1) Identification. Full coverage 100% monolayer SnSe2 uniformly covered across c-cut sapphire
2) Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
3) Smoothness. Atomically smooth surface with roughness < 0.15 nm.
4) Uniformity. Highly uniform surface morphology. SnSe2 monolayers uniformly cover across the sample.
5) Purity. 99.9995% purity as determined by nano-SIMS measurements
6) Reliability. Repeatable Raman and photoluminescence response
7) Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
8) Substrate. c-cut Sapphire but our research and development team can transfer SnSe2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.
9) Defect profile. SnSe2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected SnSe2 using α-bombardment technique.
Supporting datasets [for 100% Full area SnSe2 monolayers on c-cut Sapphire]
Transmission electron images (TEM) acquired from CVD grown full area coverage SnSe2 monolayers on c-cut sapphire confirming high crystallinity
Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer SnSe2 on c-cut sapphire
Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and shows the high crystallinity of the CVD samples. PL spectrum does not show any PL signal due to indirect band nature.
企业名称
上海巨纳科技有限公司
企业信息已认证
企业类型
信用代码
310109000501433
成立日期
2009-04-01
注册资本
1000
经营范围
通信设备、光电源、生物科技专业领域内的技术开发、技术转让、技术咨询、技术服务;销售仪器仪表,电子元器件,机械设备及配件,通信设备及相关产品(除卫星地面接收装置),日用百货,从事货物及技术的进出口业务。【企业经营涉及行政许可的,凭许可证件经营】
上海巨纳科技有限公司
公司地址
上海市虹口区宝山路778号海伦国际大厦5楼
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