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Near-Infrared Linear Image Sensor ( 0.9 – 1.7 μm ) with 512 x 1 pixels | ||
FEATURES ● 512 x 1 pixels [pixel size: S 25 x 25, M 25 x 250, L 25 x 500 μm] ● 28-pin Ceramic DIP (CDIP) ● Built-in Temperature Sensor ● 0.9 μm – 1.7 μm Spectral Range ● Minimum Pixel Operability > 99% ● Quantum Efficiency > 70% ● Snapshot ITR / IWR ● One output with up to 22 MHz Pixel Rate | APPLICATIONS ● Shortwave-Infrared Imaging ● Semiconductor Inspection / Process Monitoring ● Sorting / Recycling ● Near-Infrared Spectrophotometry | |
| The LDA512-C series is an uncooled near- infrared linear image sensor consisting of a linear InGaAs-detector array bonded on the p- on-n readout-IC. The series contains three products with different sensor pixel sizes. LDA512P25S-17-C, LDA512P25M-17-C, LDA512P25L-17-C. | |
GENERAL DESCRIPTIONS
Parameter | Unit | Value | |
Sensor Technology | --- | Planar InGaAs PIN | |
Spectral Range | μm | 0.9 – 1.7 | |
Actual Pixel Array | --- | 512 x 1 | |
Pixel Pitch | μm | 25 | |
Pixel Size | μm | Pixel Size | Dimension |
S | 25 x 25 | ||
M | 25 x 250 | ||
L | 25 x 500 | ||
Chip Size | mm | 15.3 x 4.5 | |
Package Type | --- | 28-pin Ceramic DIP (CDIP) |
Package Size L x W x T | mm | 35.56 x 15.61 x 7.15 |
Weight | g | 5.09 |
SPECIFICATIONS (1 ITS = 20 ± 1℃)
Parameter | Unit | Value | Conditions | ||
2.3 Dark Current | fA | S | ≤ 400 | Photo pixel biased @ -0.5 V | |
M | ≤ 600 | ||||
L | ≤ 1000 | ||||
2Quantum Efficiency * Fill Factor (QEFF) | % | ≥ 70 | λ = 1550 nm | ||
2 Response Nonuniformity | % | ≤ 5 | At 50% Full Well | ||
2 Response Nonlinearity | % | ≤ 2 | 15% – 85% Well Occupation Range | ||
Charge Capacity | Cint = 6.4 fF | μV/e- | 25 | 16 settings from 6.4 fF to 2.1 pF | |
Cint = 16 fF | 10 | ||||
Cint = 30 fF | 5.3 | ||||
Cint = 120 fF | 1.3 | ||||
Cint = 2.1 pF | 0.076 | ||||
Readout Noise | Cint = 6.4 fF | mV | 1.2 | ROIC Specifications | |
Cint = 16 fF | 0.8 | ||||
Cint = 30 fF | 0.6 | ||||
Cint = 120 fF | 0.5 | ||||
Cint = 2.1 pF | 0.25 | ||||
Output Swing | V | ≥ 2.0 | Gain @ 120 fF | ||
Minimum Integration Period | μs | 5 | ROIC Specifications | ||
Maximum Pixel Rate | MHz | 22 | ROIC Specifications | ||
2 Pixel Operability | % | ≥ 99 | Percentage of Pixels with QEFF Deviation within ± 20% *(QEFF Mean) | ||
1. Readings from Integrated Temperature Sensor (ITS).
2. These items are defined for central effective pixel array (512x1). Their values correspond to default operation conditions.
3. Medium gain, charge capacity @120fF, integration time 5ms.
ABSOLUTE MAXIMUM RATINGS
Parameter | Unit | Min. | Max. |
4Operating Temperature | ℃ | -40 | +70 |
4Storage Temperature | ℃ | -40 | +70 |
5 Power Consumption | mW | --- | 95 |
4. In non-condensing environment.
5. Without powering on the thermoelectric cooler.
PACKAGE OUTLINE (Unit: mm)
PIN DEFINITION | |||||||||
01 | VDD | 08 | SDOUT | 15 | GND | 22 | NC | ||
02 | RESET | 09 | DATVALID | 16 | NC | 23 | NC | ||
03 | NC | 10 | VOUT | 17 | NC | 24 | NC | ||
04 | INT | 11 | VDDA | 18 | VTEMP | 25 | NC | ||
05 | MC | 12 | VR2 | 19 | NC | 26 | NC | ||
06 | CEB | 13 | VR1 | 20 | NC | 27 | NC | ||
07 | SDIN | 14 | VDETCOM | 21 | NC | 28 | NC | ||
CHIP PROFILE
Layout
Chip size:15.3mm x 4.5mm
SPI Interface
LDA512 supports SPI protocol to set the command registers. There are functions of the gain mode, power consumption control and the sequence of pixel output.
SPI Protocol Schematic
OPERATING CONDITIONS
Bias Input
Pin # | Bias | Voltage | Current | Remark | |
01 | VDD | 1.8 V | > 30 mA | Positive logic supply | |
11 | VDDA | 3.6 V | > 60 mA | Positive analog supply | |
12 | VR2 | 0.3 V | > 30 mA | External Input Bias | |
13 | VR1 | 2.3 V | > 5 mA | External Input Bias | |
14 | VDETCOM | > VR1 | -- | Detector common voltage 6 Detector bias = VDETCOM - VR1 | |
15 | GND | 0 V | -- | Ground | |
02 | RESET | 1.8 V | -- | Chip reset | |
6. VDETCOM lower than 2.3 V will forward bias the sensor, the exact zero bias voltage is device and temperature dependent.
Digital Pattern Input
Pin # | Clocks | Levels | Rise/Fall | Remark | |
04 | INT | 1.8 V / 0 V | < 50 nS | Integration time | |
05 | MC | 1.8 V / 0 V | < 5 nS | Master clock Max. Freq. = 22 MHz | |
06 | CEB | 1.8 V / 0 V | < 10 nS | 7Chip enable | |
07 | SDIN | 1.8 V / 0 V | < 5 nS | Data code input | |
7. The input and output of all commands start after the falling edge of CEB.
Digital Pattern Output
Pin # | Clocks | Levels | Rise/Fall | Remark | |
08 | SDOUT | 1.8 V / 0 V | -- | Data code output | |
09 | DATVALID | 1.8 V / 0 V | -- | Valid data output flag signal | |
Analog Output
Pin # | Outputs | Levels | Value | Remark | ||
10 | VOUT | 0.2 ~ 2.4 V | -- | Video output | ||
18 | VTEMP | 2.138 V | 27τ | Integrated Temperature Sensor (-0.6 mV /τ) | ||
Output Linearity
Measurement Conditions | ||
Illumination | 1550 nm | |
Gain | @120 fF | |
Integration Time | 15 ~ 85% Well Occupation | |
0.5 ms ~ 1.4 ms | ||
ITS | 20 ： 1℃ | |
Detector Bias | Vdetcom = 2.8 V (bias = -0.5 V) | |
Screen Size | 512 x 1 | |
QEFF Spectrum (typical example)
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企业名称
西安立鼎光电科技有限公司
企业信息已认证
企业类型
信用代码
91610113MA6TXWNLXH
成立日期
2016-04-21
注册资本
200
经营范围
西安立鼎光电科技发展有限公司
公司地址
陕西省西安市高新区亿恒泰来产业园2号楼304室
客服电话
公司名称： 西安立鼎光电科技发展有限公司
公司地址： 陕西省西安市高新区亿恒泰来产业园2号楼304室 联系人： 吴婷 邮编： 710065 联系电话： 400-860-5168转6159
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