SAM半导体可饱和吸收镜1064nm

laser wavelength

λ = 1064 nm

high reflection band (R>99%)

λ = 1020 .. 1110 nm

absorption

A0 = 0.5 - 70 %

relaxation time

τ ~ 500 fs - 27 ps

SAM-1064-0.7-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 0.7 %, Δ R = 0.4 %,
 τ ~ 1 ps

SAM-1064-1-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 1 %, Δ R = 0.6 %,
 τ ~ 1 ps

SAM-1064-1.5-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 1.5 %, Δ R = 0.8 %,
 τ ~ 1 ps

SAM-1064-2-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 2 %, Δ R = 1.2 %,
 τ ~ 1 ps

SAM-1064-3-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 3 %, Δ R = 1.6 %,
 τ ~ 1 ps

SAM-1064-3.5-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 3.5 %, Δ R = 2 %,
 τ ~ 1 ps

SAM-1064-4-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 4 %, Δ R = 2.4 %,
 τ ~ 1 ps

SAM-1064-5-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 5 %, Δ R = 3 %, 
 τ ~ 1 ps

SAM-1064-6-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 6 %, Δ R = 3.5 %, 
 τ ~ 1 ps

SAM-1064-8-500fs-x

1 week

 SAM: λ = 1064 nm, absorptance 8 %, Δ R = 5 %

SAM-1064-10-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 10 %, Δ R = 6 %,
 τ ~ 1 ps

SAM-1064-13-500fs-x

1 week

 SAM: λ = 1064 nm, absorptance 13 %, Δ R = 8 %

SAM-1064-18-500fs-x

1 week

 SAM: λ = 1064 nm, absorptance 18 %, Δ R = 10 %,
 τ ~ 500 fs, antiresonant multi quantum well structure,

SAM-1064-23-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 28 %, Δ R = 15 %,
 τ ~ 1 ps, antiresonant multi quantum well structure,

SAM-1064-26-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 28 %, Δ R = 13 %,
 τ ~ 1 ps, resonant multi quantum well structure,

SAM-1064-38-1ps-x

1 week

 SAM: λ = 1064 nm, absorptance 38 %, Δ R = 23 %,
 τ ~ 1 ps, antiresonant multi quantum well structure,

SAM-1064-70-500fs-x

1 week

 SAM: λ = 1064 nm, absorptance 70 %, Δ R = 40 %,
 τ ~ 500 fs