开尔文探针表面光电压谱SPV 光伏应用调研报告

2015-01-09 09:11

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资料摘要：

ZnO nanorod arrays on an ITO substrate and nanorod powder have been prepared via a chemical method in aqueous solution at low temperature. Two dimensions of composite nanorods in the arrays were obtained by controlling the reaction time. SEM, XRD, UV‐vis transmission, and PL measurements have been utilised to characterise the samples. The surface photovoltage (SPV) spectra of the three samples have been comparatively

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开尔文探针扫描系统常见问题解答

The Kelvin Probe method is a relative one. To determine the absolute work function of the sample the vibrating tip has to be calibrated against another “reference” surface. However the value of the tip work function is obviously only as good as the value taken for the reference surface. As a reference sample an aluminum metal plate covered with a thin gold layer has been used (fig. 2). Based on our experiments we assume the gold reference work function as 5.10 eV. The objective of this sample is to measure the contact potential difference (CPD) on the gold surface, and taking the gold reference as 5.10 eV to calculate the tip work function

开尔文探针扫描表面光电压谱用于太阳能电池的研究报告

The scanned sample have been mounted on a aluminum sample holder (fig. 3). Before each SPV measurement the smples have been stored in dark for 12 hours. The contact potential difference (CPD) measured after the 12 hours has been taken as the zero level. The results presented in section 2 show an absolute surface potential change due to light illumination. All measurements have been made in ambient at a temperature of 20±2°C and relative hum idity of 41 ± 2%. In section 3 we presented the light source characteristics

开尔文探针表面光电压用于表面氧化和氮化硅涂层多晶的研究

We have applied a high resolution scanning Kelvin probe to perform dark surface potential topographies of multicrystalline silicon solar cells having thin coatings of Si3N4 and SiO2. We clearly observe the electrical characteristics of the screen printed bus-bar and associated fingers, grain boundaries, together with characteristic structures on the oxide and nitride, coupled to significant surface potential variations across larger sections of the wafer. Associated surface photovoltage measurements can be unambiguously decoded to show coating and bulk contributions. The nitride coating exhibits carrier trapping lifetimes in excess of 13 minutes at 300K.

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