仪器应用: Isotropic dry etching of polymer (photo resist) Cleaning of silicon (or glass) wafer surface Removal of native oxide on wafer
技术参数: Sample size & throughput : 4 ~ 8inch, Single wafer RF power : 600W @13.56MHz, Auto matching control Substrate chuck : Heating or Cooling available (selectable) Process gas : O2, CF4 ,Ar, N2 Gas supply method : Showerhead type Ultimate pressure : ≤ 5×10-3Torr Vacuum pump : Rotary pump Process control : Auto process control (PLC)