简介:用原子层沉积系统在硅片上沉积氧化铪HfO2和Al2O3,以及砷As参杂多晶硅研究,Arsenic(As)-doped polycrystalline-silicon gate/HfO2 , HfO2–Al2O3, or Al2
O3–HfO2–Al2O3 / p-type Si(100) metal–oxide–semiconductor capacitors were fabr简介:用原子层沉积系统在硅片上沉积氧化铪HfO2和Al2O3,以及砷As参杂多晶硅研究,Arsenic(As)-doped polycrystalline-silicon gate/HfO2 , HfO2–Al2O3, or Al2
O3–HfO2–Al2O3 / p-type Si(100) metal–oxide–semiconductor capacitors were fabricated using an
atomic-layer-deposition technique to investigate the degree of As penetration and the electrical
properties of various high-k gate dielectric stacks。详细>