简介:【中文摘要】 将组合技术和离子束技术结合起来,用于硅基发光材料的研究。用组合离子束技术在硅 基材料上制备了64个直径为2mm的单元──材料芯片,并对硅基材料芯片各单元进行了卢瑟辐 背散射、质子弹性散射和扫描阴极射线发光特性分析。
【英文简介:【中文摘要】 将组合技术和离子束技术结合起来,用于硅基发光材料的研究。用组合离子束技术在硅 基材料上制备了64个直径为2mm的单元──材料芯片,并对硅基材料芯片各单元进行了卢瑟辐 背散射、质子弹性散射和扫描阴极射线发光特性分析。
【英文摘要】 The combinatorial ion beam implantation technique has been applied to synthesize a silicon-based material chip with 64 samples of 2 mm diameter size on it. The Rutherford backscattering spectrometry and photon elastic scattering were used to analyse the samples on the chip.The depth-resolved cathodoluminescence measurement of the samples has provided some clues for optical properties correlated with the impurity distribution in the material. 详细>