TlGaSe2 硒化镓铊晶体

The only commercially available TlGaSe2 vdW crystals have been synthesized at our facilities through float zone technique. TlGaSe2 semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX2 (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe2, TlGaS2, TlInS2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. Stacking of the atoms in TlGaSe2, TlGaS2 and TlInS2 layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. As a result, these crystals exhibit layered structure with weak vdW coupling between the adjacent layers. In particular, TlGaSe2 is a direct gap semiconductor with optical band gap of 1.87 eV, it exhibits unique structural phase transition from normal (N) to a commensurate (C) state via an intermediate incommensurate (I) phase at 100K and 120K. They exhibit para-to-ferroelectric phase transitions, and also shows ferroelectric and ferroelastic behavior. Crystals come with guaranteed structural phase transitions.

Properties of TlGaSe2 layered crystals

TlGaSe2 硒化镓铊晶体信息由上海巨纳科技有限公司为您提供，如您想了解更多关于TlGaSe2 硒化镓铊晶体报价、型号、参数等信息，欢迎来电或留言咨询。

除供应TlGaSe2 硒化镓铊晶体外，上海巨纳科技有限公司还可为您提供Semiconductor analog of graphene: Graphene oxide has been sy、单层二硒化铼 、石英基底石墨烯（进口） Grapheneon Quartz等产品，公司有专业的客户服务团队，是您值得信赖的合作伙伴。