二硫化钼晶体(2H-合成/99.995%/n 型) MoS2(Molybdenum Disulfide)-syn
晶体尺寸:~10毫米
电学性能:N型半导体
晶体结构:六边形
晶胞参数:a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120°
晶体类型:合成
晶体纯度:>99.995%
X-ray diffraction on a 2H-MoS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal MoS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal MoS2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal MoS2. Measurement was performed with a 785 nm Raman system at room temperature.
二硫化钼晶体(2H-合成/99.995%/n型) MoS2-syn-N ty信息由上海巨纳科技有限公司为您提供,如您想了解更多关于二硫化钼晶体(2H-合成/99.995%/n型) MoS2-syn-N ty报价、型号、参数等信息,欢迎来电或留言咨询。
除供应二硫化钼晶体(2H-合成/99.995%/n型) MoS2-syn-N ty外,上海巨纳科技有限公司还可为您提供Graphene Fluoride 氟化石墨烯、50kV一体式X射线源、二硫化锡(SnS2)等产品,公司有专业的客户服务团队,是您值得信赖的合作伙伴。