Sapphire
? Chemical resistance. Sapphire is highly inert and resistant to attack in most process environments including hydrofluoric acid and the fluorine plasma applications commonly found in semiconductor wafer processing (NF3, CF4). Mechanical properties. Electrical properties. Optical transmission. Surface properties. Thermal properties. Wear properties. |
Diameter/Width | 5-220 mm |
Thickness/Length | 25 – 500 mm |
Orientation | C (0001), M (1010), A (1120), R (1102) |
Surface quality | As-cut, fine-ground |
Ends/Edge Quality | As-cut, fine-ground |
Inner Diameter | 0.6 - 30 mm |
Outer Diameter | 2 - 50 mm |
Length | Up to 600 mm |
Orientation | Random, C |
Surface quality | As-grown, fine-ground, 80/50 per MIL-0-13830 |
Ends/Edge Quality | As-cut |
Diameter | 50.8 – 160mm |
Thickness | 0.3 – 5 mm |
Orientation | C (0001), M (1010), A (1120), R (1102) |
Surface quality | EPI-polished (Ra<0.5 nm) suitable for epitaxial growth |
Diameter | 1-240 mm |
Thickness | >/=0.15 mm |
Orientation | Random, M (1010), A (1120), R (1102), C (0001) |
Flatness | 4 λ per inch |
Parallelism | <0.5 - 3 angular minutes |
Chamfer | < /=0.1 - 0.5 mm x 45+/-5 deg |
Surface quality | 80/50, 60/40, 40/20, 20/10. or 10/5 per MIL-0-13830 |
Diameter | 1-300 mm |
Thickness | >/=0.15 mm |
Orientation | C (0001), M (1010), A (1120), R (1102) |
Surface quality | As-cut, fine-ground |
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