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1.
【作者】:J. M. Pearce, J. Deng, R. W. Collins, and C. R. Wronski
【题名】:Light-induced Defect States in Hydrogenated Amorphous Silicon Centered around 1.0 and 1.2 eV from the Conduction Band Edge
【期刊】: Applied Physics Letters
【年、卷、期、起止页码】:Vol. 83, No.18, pp3725-3727,2003.
2.
【作者】:G. Muller
【题名】:On the Generation and Annealing of Dangling Bond Defects in Hydrogenated Amorphous Silicon
【期刊】:App, pl. Phys. A
【年、卷、期、起止页码】:vol.45, pp. 41-51, 1988
3.
【作者】:A. Kolodziej
【题名】:Staebler-Wronski Effect in Amorphous Silicon and its Alloys
【期刊】:Opto-Electronics Review
【年、卷、期、起止页码】:12(1), pp. 21–32 ,2004
4.
【作者】:Kaichi Fukuda. NoBuo lmai. Shin-ichi Kawamura. Kunio Matsumura. Nobuki Ibaraki
【题名】:Switching Performance of High Rate Deposition Processing a-Si:H TFTs
【期刊】:Journal of Non-Crystalline Solids
【年、卷、期、起止页码】: pp.1137-1140,1996
5.
【作者】:Sandrine Martin, Jerzy Kanicki, Nicolas Szydlo, Alain-Rolland
【题名】:Analysis of the Amorphous Silicon Thin Film Transistors Behavior under Illumination
【期刊】: AM-LCD’
【年、卷、期、起止页码】:1997
6.
【作者】:Shih-Fong Lee, Kuan-Huei Lin, Chung-Jen Kuo
【题名】:The Correlation Between Deposition Parameters and Optoelectronic Properties in 1 Intrinsic Hydrogenated Amorphous Silicon
【期刊】:J.DA-YEH INST. TECH.
【年、卷、期、起止页码】:3 (1) pp.151-64, 1994
7.
【作者】:Shih-Fong Lee, Kuan-Huei Lin, Chung-Jen Kuo
【题名】:Sensitizing States in Intrinsic Hydrogenated Amorphous Silicon and Their Effect on Photoconductivity
【期刊】:J.DA-YEH INST. TECH
【年、卷、期、起止页码】:2(1) pp.81-95, 1993
8.
【作者】:Yoshimi YAMAJI, Mitsushi IKEDA, Masahiko AKIYAMA and Takahiko ENDO
【题名】:Characterization of Photo Leakage Current of Amorphous Silicon Thin-Film Transistors
【期刊】:Japanese Journal of Applied Physics
【年、卷、期、起止页码】:Vol. 38, pp.6202–6206,1999